Semiconductor device and production method thereof

ABSTRACT

A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation-in-part application of theU.S. patent application Ser. No. 11/229,745 filed on Sep. 20, 2005,based on Japanese Priority Patent Applications No. 2005-182382 filed onJun. 22, 2005 and No. 2006-162134 filed on Jun. 12, 2006. The entirecontents of these applications are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a semiconductor device and amethod of producing the semiconductor device, and particularly, to asemiconductor device having a high operating speed due to stressapplication, and a method of producing the semiconductor device.

2. Description of the Related Art

A semiconductor device is made at a smaller and smaller scale in orderto increase its operating speed and expand its functions, and so far,large scale integrated circuits (LSI) including transistors having agate length less than 100 nm have been fabricated. When a transistor isminiaturized following a scaling rule more and more, the operating speedof the semiconductor device increases accordingly. However, when thegate length becomes extremely short, a threshold voltage decreases,namely, a so-called “short channel” effect occurs. Various methods areproposed to reduce the short channel effect, but effects of thesemethods are becoming more and more limited.

On the other hand, since mobility of holes is lower than mobility ofelectrons in silicon, it has been a crucial issue in the related art toincrease the operating speed of a p-channel MOS (Metal-Oxide-Silicon)transistor, in which holes serve as carriers.

The p-channel MOS transistor is a component of a CMOS (ComplementaryMOS) inverter circuit, which is a basic element of a logic circuit.Hence, if the p-channel MOS transistor cannot operate at high speed,speed of the CMOS inverter circuit cannot be increased, either, and inturn, speed of the LSI cannot be increased.

A method is well know for improving hole mobility by applying acompressive stress to a channel region of a silicon substrate.

FIG. 1 is a cross-sectional view of a p-channel MOS transistor 100involving compressive stress.

As shown in FIG. 1, a gate electrode 203 is arranged on a siliconsubstrate 201 with a gate insulating film 202 in between. On side wallsof the gate electrode 203, side-wall insulating films 204A and 104B areprovided to cover the surface of the silicon substrate 201.

In the silicon substrate 201, a channel region is formed beneath thegate electrode 103. In addition, in the silicon substrate 201, a sourceextension region 201A and a drain extension region 101B, in which p-typeimpurity elements are implanted, are formed on the two sides of the gateelectrode 203. Further, a source region 201S and a drain region 201D, inwhich p-type impurity elements are implanted, are formed outside thesource extension region 201A and the drain extension region 201B. Holesmove from the source region 201S, and pass through the source extensionregion 201A, the channel region, and the drain extension region 201B,and finally arrive at the drain region 201D. Magnitude of a current ofthe holes is controlled by a gate voltage applied to the gate electrode203 in the channel region.

Further, in the p-channel MOS transistor 200, SiGe mixed crystal layers205A and 205B are formed in regions outside the side-wall insulatingfilms 204A and 204B in the silicon substrate 201. The SiGe mixed crystallayers 205A and 205B are formed in the silicon substrate 201 byepitaxial growth. Because the lattice constant of the SiGe mixed crystallayers 205A and 205B is greater than the lattice constant of the siliconsubstrate 201, a compressive stress is induced in the SiGe mixed crystallayers 205A and 205B in a horizontal direction as indicated by arrows“a” in FIG. 1. Due to the compressive stress, lattices of the SiGe mixedcrystal layers 205A and 205B stretch in a vertical direction asindicated by an arrow “b” in FIG. 1, namely, distortion of the latticesoccurs.

Due to this distortion, in the channel region of the silicon substrate201, which is sandwiched by the SiGe mixed crystal layers 205A and 205B,the lattice of the silicon substrate 201 stretches in the verticaldirection as indicated by an arrow “c” in FIG. 1, in response to thestretch of the lattices of the SiGe mixed crystal layers 205A and 205B.As a result, in the channel region of the silicon substrate 201, auniaxial compressive stress is induced in the horizontal direction asindicated by arrows “d” in FIG. 1.

In the p-channel MOS transistor 200 shown in FIG. 1, because of theuniaxial compressive stress in the channel region, symmetry of thesilicon crystal in the channel region is locally modulated. In responseto the change of the symmetry in the channel region, the degeneracy ofheavy-hole valence bands and light-hole valence bands is removed. As aresult, the hole mobility increases in the channel region, and theoperating speed of a transistor rises. Particularly, the increase inhole mobility due to the compressive stress locally induced in thechannel region and increase in transistor operating speed aresignificant in a transistor having a gate length less than 100 nm.

For example, reference can be made to U.S. Pat. No. 6,621,131 (below,referred to as “reference 1”) for details of the technique.

SUMMARY OF THE INVENTION

It is a general object of the present invention to solve one or more ofthe problems of the related art.

It is a more specific object of the present invention to provide asemiconductor device able to suppress a short channel effect and improvecarrier mobility, and a method of producing the semiconductor device.

According to a first aspect of the present invention, there is provideda semiconductor device, including: a silicon substrate having a channelregion; a gate electrode formed over the silicon substrate correspondingto the channel region with a gate insulating film in between; a firstside wall insulating film formed on side walls of the gate electrode; asecond side wall insulating film formed on side surfaces of the firstside wall; a source extension region and a drain extension region formedfrom diffusion regions having a predetermined conductivity, saiddiffusion regions being formed in the silicon substrate on sides of thegate electrode to sandwich the channel region; a source region and adrain region formed from diffusion regions having the predeterminedconductivity, said diffusion regions being formed in the siliconsubstrate outside the second side wall insulating film and in contactwith the source extension region and the drain extension region,respectively; and a semiconductor mixed crystal layer formed in thesilicon substrate outside the second side wall insulating film andepitaxially growing over the silicon substrate, wherein thesemiconductor mixed crystal layer is formed from a SiGe mixed crystalwhen the predetermined conductivity is p-type, or from a SiC mixedcrystal when the predetermined conductivity is n-type, the semiconductormixed crystal layer includes an impurity having the predeterminedconductivity, the semiconductor mixed crystal layer is grown to a heightdifferent from an interface between the silicon substrate and the gateinsulating film, and the semiconductor mixed crystal layer has anextended portion between a bottom surface of the second side wallinsulating film and a surface of the silicon substrate, said extendedportion being in contact with a portion of the source extension regionand the drain extension region.

According to the present invention, because a semiconductor mixedcrystal layer having a predetermined conductivity is epitaxially grownon the sides of the channel region, a uniaxial stress is induced in thechannel region, and this improves greatly the mobility of carriersthrough the channel region.

In addition, because the semiconductor mixed crystal layer has anextended portion, which is located between a bottom surface of thesecond side wall insulating film and a surface of the silicon substrate,and is in contact with a portion of one of the source extension regionand the drain extension region, according to research of the inventorsof the present invention, the extended portion of the semiconductormixed crystal layer induces a stress opposite to the uniaxial stresswithin the substrate plane in the silicon substrate just below thesemiconductor mixed crystal layer, and indirectly induces a stress inthe same direction as the uniaxial stress on the silicon crystal in thechannel region. Because this stress is in the same direction as theuniaxial stress, it tends to increase the stress in the channel region,and this further increases the mobility of the carriers.

For example, when the semiconductor device is a p-channel MOStransistor, the semiconductor mixed crystal layer is formed from a SiGemixed crystal layer, and a compressive stress is applied from the SiGemixed crystal layer on the two sides of the channel region to thechannel region along a moving direction of holes. Because the extendedportion of the SiGe mixed crystal layer is in contact with a portion ofthe source extension region or the drain extension region, which are inproximity of the source region and the drain region, the extendedportion of the SiGe mixed crystal layer applies a stretching stress onthe source extension region or the drain extension region. In this case,because the side surfaces of the source region and the drain region arefixed by the SiGe mixed crystal layer, the extended portion of the SiGemixed crystal layer induces stretched deformation in the sourceextension region and the drain extension region in contact with theextended portion, and the stretching deformation generates an oppositestress in the silicon crystal in the channel region not in contact withthe SiGe mixed crystal layer. As a result, it is possible to effectivelyapply the compressive stress on the channel region together with thedeformation generated by the SiGe mixed crystal layer in the source anddrain regions. This further increases the mobility of the carriers.

On the other hand, when the semiconductor device is an n-channel MOStransistor, the semiconductor mixed crystal layer is formed from a SiCmixed crystal layer, and a stretching stress is induced on the channelregion along the moving direction of electrons. In this case, because ofthe extended portion of the SiC mixed crystal layer, a compressivestress is applied on the source extension region and the drain extensionregion close to the channel region, and it is possible to effectivelyapply the stretching stress on the channel region, and to furtherincreases the mobility of electrons in the channel region.

Further, because the semiconductor mixed crystal layer includesconductive impurities and is in contact with a portion of one of thesource extension region and the drain extension region, stray resistancecan be reduced greatly, and this can improve a driving current of thesemiconductor device.

According to a second aspect of the present invention, there is provideda method of fabricating a semiconductor device including semiconductormixed crystal layers on sides of a channel region for inducing a stressin the channel region, comprising the steps of: forming a gateinsulating film over the silicon substrate; forming a gate electrodeover the silicon substrate in correspondence to the channel region withthe gate insulating film in between; forming first diffusion regions inthe silicon substrate on respective sides of the gate electrode andhaving a predetermined conductivity; forming a first side wallinsulating film on side walls of the gate insulating film and the gateelectrode, a portion of the first side wall insulating film extendingover the silicon substrate; forming a second side wall insulating filmon side surfaces of the first side wall; forming second diffusionregions in the silicon substrate outside the second side wall insulatingfilm and having the predetermined conductivity, said second diffusionregions forming a source region and a drain region; forming, by etching,trenches in the silicon substrate corresponding to the source region andthe drain region so that side surfaces and bottom surfaces of thetrenches are continuously covered by the second diffusion regions, saidtrenches having side surfaces defined by facets; removing a portion ofthe first side wall insulating film; growing the semiconductor mixedcrystal layer by epitaxial growth to fill up the trenches, saidsemiconductor mixed crystal layers being grown to a height differentfrom an interface between the silicon substrate and the gate insulatingfilm, wherein in the step of removing, a portion of the first side wallinsulating film between a bottom surface of the second side wallinsulating film and a surface of the silicon substrate is removed toform a space, and in the step of growing the semiconductor mixed crystallayers, the semiconductor mixed crystal layers fill up the space.

According to the present invention, trenches are formed, and after aportion of the first side wall insulating film between a bottom surfaceof the second side wall insulating film and a surface of the siliconsubstrate is removed and a space is formed, the semiconductor mixedcrystal layers are grown epitaxially to fill up the trenches and thespace.

The semiconductor mixed crystal layers grow from the surface of thesilicon substrate in the space, the semiconductor mixed crystal layersfill up the space, and grow along the second side wall insulating film.Hence, in the processing with HF, the semiconductor mixed crystal layersand the second side wall insulating film are in close contact, and thespace is filled up. This prevents HF from entering the space between thesemiconductor mixed crystal layers and the second side wall insulatingfilm, and prevents the first side wall insulating film from beingdirectly exposed. As a result, it is possible to prevent the first sidewall insulating film from being partially removed to expose the siliconsubstrate, and in a step of forming a silicide layer, it is possible toprevent the silicide layer from damaging, like a spike, the siliconsubstrate.

These and other objects, features, and advantages of the presentinvention will become more apparent from the following detaileddescription of the preferred embodiments given with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a p-channel MOS transistor 100involving compressive stress;

FIG. 2 is a cross-sectional view of a MOS transistor disclosed inreference 2;

FIG. 3 is a cross-sectional view illustrating an example of asemiconductor device according to a first embodiment of the presentinvention;

FIG. 4A through FIG. 4C are cross-sectional views illustrating portionsof the semiconductor device 10 in FIG. 3 for illustrating a method offabricating the semiconductor device 10 according to the presentembodiment of the present invention;

FIG. 5A and FIG. 5B are cross-sectional views illustrating portions ofthe semiconductor device 10 in FIG. 3 continuing from FIG. 4C forillustrating the method of fabricating the semiconductor device 10 ofthe present embodiment of the present invention;

FIG. 6 is a cross-sectional view illustrating an example of asemiconductor device 30 according to a second embodiment of the presentinvention;

FIG. 7A and FIG. 7B are cross-sectional views illustrating portions ofthe semiconductor device 30 in FIG. 6 for illustrating a method offabricating the semiconductor device 30 according to the secondembodiment of the present invention;

FIG. 8 is a cross-sectional view illustrating an example of asemiconductor device 40 according to a third embodiment of the presentinvention;

FIG. 9A through FIG. 9C are cross-sectional views illustrating portionsof the semiconductor device 40 in FIG. 8 for illustrating a method offabricating the semiconductor device 40 according to the thirdembodiment of the present invention;

FIG. 10 is a cross-sectional view illustrating an example of asemiconductor device 50 according to a fourth embodiment of the presentinvention;

FIG. 11A through FIG. 11C are cross-sectional views illustratingportions of the semiconductor device 50 in FIG. 10 for illustrating amethod of fabricating the semiconductor device 50 according to thefourth embodiment of the present invention;

FIG. 12A through FIG. 12C are cross-sectional views illustratingportions of the semiconductor device 50 in FIG. 10 continuing from FIG.11C for illustrating the method of fabricating the semiconductor device50 of the present embodiment of the present invention;

FIG. 13 is a cross-sectional view illustrating a portion of thesemiconductor device 50 continuing from FIG. 12C for illustrating themethod of fabricating the semiconductor device 50 of the presentembodiment of the present invention;

FIG. 14 is a cross-sectional view illustrating an example of asemiconductor device 60 according to a fifth embodiment of the presentinvention;

FIG. 15 is a cross-sectional view illustrating an example of asemiconductor device 65 according to a sixth embodiment of the presentinvention;

FIG. 16 is a cross-sectional view illustrating an example of asemiconductor device 70 according to a seventh embodiment of the presentinvention;

FIG. 17 is a cross-sectional view illustrating an example of asemiconductor device according to an eighth embodiment of the presentinvention;

FIG. 18 is a cross-sectional view illustrating an example of asemiconductor device according to a ninth embodiment of the presentinvention;

FIG. 19 is a cross-sectional view illustrating an example of asemiconductor device according to a 10th embodiment of the presentinvention;

FIG. 20 is a cross-sectional view illustrating an example of asemiconductor device according to an 11th embodiment of the presentinvention;

FIG. 21 is a cross-sectional view illustrating an example of asemiconductor device according to a 12th embodiment of the presentinvention;

FIG. 22 is a cross-sectional view illustrating an example of asemiconductor device according to a 13th embodiment of the presentinvention;

FIG. 23A through FIG. 23G are cross-sectional views illustratingportions of the semiconductor device 100 in FIG. 22 for illustrating amethod of fabricating the semiconductor device 100 according to thepresent embodiment of the present invention;

FIG. 24 is a cross-sectional view illustrating an example of asemiconductor device 110 according to a 14th embodiment of the presentinvention;

FIG. 25 is a cross-sectional view illustrating an example of asemiconductor device 110 according to a 15th embodiment of the presentinvention;

FIG. 26 is a cross-sectional view illustrating an example of asemiconductor device 110 according to a 16th embodiment of the presentinvention;

FIG. 27 is a cross-sectional view illustrating an example of asemiconductor device 116 according to a 17th embodiment of the presentinvention;

FIG. 28 is a cross-sectional view illustrating an example of asemiconductor device 117 according to an 18th embodiment of the presentinvention;

FIG. 29 is a cross-sectional view illustrating an example of asemiconductor device 120 according to a 19th embodiment of the presentinvention;

FIG. 30A and FIG. 30B are cross-sectional views illustrating portions ofthe semiconductor device 120 in FIG. 29 for illustrating a method offabricating the semiconductor device 120 according to the 19thembodiment of the present invention;

FIG. 31 is a cross-sectional view illustrating an example of asemiconductor device 125 according to a 20th embodiment of the presentinvention;

FIG. 32 is a cross-sectional view illustrating an example of asemiconductor device 126 according to a 21st embodiment of the presentinvention;

FIG. 33 is a cross-sectional view illustrating an example of asemiconductor device 127 according to a 22nd embodiment of the presentinvention;

FIG. 34 is a cross-sectional view illustrating an example of asemiconductor device 128 according to a 23rd embodiment of the presentinvention;

FIG. 35 is a cross-sectional view illustrating an example of asemiconductor device 129 according to a 24th embodiment of the presentinvention;

FIG. 36 is a cross-sectional view illustrating an example of asemiconductor device 130 according to a 25th embodiment of the presentinvention;

FIG. 37 is an enlarged cross-sectional view of a principal portion ofthe semiconductor device 130;

FIG. 38 is a cross-sectional view illustrating an example of asemiconductor device 140 according to a 26th embodiment of the presentinvention; and

FIG. 39 is a cross-sectional view illustrating an example of asemiconductor device 145 according to a 27th embodiment of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Below, preferred embodiments of the present invention are explained withreference to the accompanying drawings.

Inventors of the present invention found new technical subject matter asbelow, which has not been disclosed so far.

It is known that when the compressive stress induced in the channelregion of a transistor increases, the hole mobility in the channelregion rises and a driving current of the transistor increases.Nevertheless, in the p-channel MOS transistor 200 as shown in FIG. 1,when the interval between the SiGe mixed crystal layers 205A and 205B islarge, the vertical stretch at the center of the channel region of thesilicon substrate 201 becomes small, and due to this, a sufficientlylarge compressive stress cannot be induced in the channel region. Inorder to increase the compressive stress, it is effective to reduce theinterval between the SiGe mixed crystal layers 205A and 205B.

However, in a transistor having an extremely short gate length, thesource extension region 201A and the drain extension region 201B on thetwo sides of the channel region, and non-illustrated pocket implantationregions formed on the inside of the source extension region 201A and thedrain extension region 201B have functions of suppressing the shortchannel effect. Because the SiGe mixed crystal layers 205A and 205B areformed after implanting impurities into the source extension region201A, the drain extension region 201B, and the pocket implantationregions, it is necessary to form trenches in proximity of these impurityregions. Hence, when it is attempted to reduce the interval between theSiGe mixed crystal layers 205A and 205B, when forming the trenches,impurity profiles are disturbed, roll-off characteristics of a thresholdvoltage is degraded, and a leakage current rises, namely, the shortchannel effect occurs.

In other words, when it is attempted to increase the compressive stressand thus increase the driving current by reducing the interval betweenthe SiGe mixed crystal layers 205A and 205B, trade-off with suppressionof the short channel effect should be considered.

For example, this issue is discussed in “S. E. Thompson et al., IEEETransactions on Electrons Devices, Vol. 51, No. 11, November, 2004, pp.1790-1797” (below, referred to as “reference 2”).

FIG. 2 is a cross-sectional view of a MOS transistor disclosed inreference 2.

The MOS transistor is a modification of the MOS transistor 200 in FIG.1, therefore, the same reference numbers are assigned to the sameelements as those in FIG. 1, and overlapping descriptions are omitted.

As illustrated in FIG. 2, the SiGe mixed crystal layers 205A and 205Bare epitaxially grown again to fill up trenches 205Aa and 205Ba formedin the silicon substrate 201 up to a height L indicated by a dotted linein FIG. 2. As illustrated in FIG. 2, the height L is higher than theinterface between the silicon substrate 201 and the gate insulating film202.

In FIG. 2, a silicide layer 206 is formed on the SiGe mixed crystallayers 205A and 205B; in fact, a nickel silicide layer is used in 90-nmor sub-90-nm semiconductor devices. When forming the nickel silicidelayer, pre-processing is performed with HF (hydrofluoric acid) to removethe native oxide films on surfaces of the SiGe mixed crystal layers 205Aand 205B. In this process, if there exist spaces between the SiGe mixedcrystal layers 205A and 205B and outer surfaces of the side-wallinsulating films 204A and 204B due to facets of the SiGe mixed crystallayers 205A and 205B, the gate insulating film 202, or the side-wallinsulating films 204A and 204B, which are formed from silicon oxidefilms, are dissolved by HF, and part of the surface of the siliconsubstrate 201 ends up being exposed. If the silicide layer 206 is formedunder such conditions, the silicide layer 206 may destroy, like a spike,the pn junction formed between the source extension region 201A and thedrain extension region 201B and the n-type silicon substrate 201, andextend to the n-well region of the silicon substrate 201, which causesstrong junction leakage.

As described in the following embodiments, the present inventionprovides a semiconductor device and a method of producing thesemiconductor device to solve these problems.

First Embodiment

FIG. 3 is a cross-sectional view illustrating an example of asemiconductor device according to a first embodiment of the presentinvention.

The semiconductor device 10 shown in FIG. 3 is a p-channel MOStransistor, in which a device region 11A demarcated by an elementseparation region 12 is formed on a single crystal silicon substrate 11having a (100) crystal plane as a principal plane. Corresponding to thedevice region 11A, which is an n-type semiconductor region, an n-type Siwell 11 n is formed in the silicon substrate 11.

On the silicon substrate 11 including the n-type device region 11A, agate insulating film 13 is formed on the silicon substrate correspondingto a channel region in the silicon substrate. For example, the gateinsulating film 13 may be formed from a thermal oxide film, a siliconnitride film, a silicon oxide nitride film, or others. In this example,it is assumed that the gate insulating film 13 is formed from a siliconoxide nitride film having a thickness of 1.2 nm.

On the gate insulating film 13, a gate electrode 14 is formed from apoly-silicon film including boron (B) or other p-type impurities.

On side-walls of the laminated structure of the gate insulating film 13and the gate electrode 14, first side wall insulating films 16A and 16Bare formed, for example, from a silicon oxide film by CVD. The firstside wall insulating films 16A and 16B cover portions of the siliconsubstrate besides the gate insulating film 13, and cover the side-wallsof the laminated structure of the gate insulating film 13 and the gateelectrode 14.

Second side-wall insulating films 18A and 18B are formed on sidesurfaces of the first side walls 16A and 16B, for example, from asilicon nitride film.

In the silicon substrate 11, trenches 111A and 111B are formed outsidethe second side-wall insulating films 18A and 18B, respectively. SiGemixed crystal layers 19A and 19B including p-type impurities are grownepitaxially in the trenches 111A and 111B to fill up the trenches 111Aand 111B, respectively. The SiGe mixed crystal layers 19A and 19Bepitaxially grown on the silicon substrate 11 have lattice constantsgreater than the silicon substrate 11, and as described above withreference to FIG. 1, a uniaxial compressive stress is applied on thechannel region just below the gate electrode 14 in the silicon substrate11. The second side wall insulating films 18A and 18B cover portions ofthe SiGe mixed crystal layers 19A and 19B, and cover the side surfacesof the first side walls 16A and 16B.

In the p-channel MOS transistor 10 shown in FIG. 3, n-type pocketimplanted regions 11 pc are formed in the device region 11A on two sidesof the gate electrode 14. For example, the n-type pocket implantedregions 11 pc are formed from by implanting Sb or other n-typeimpurities obliquely. Further, a source extension region 11EA and adrain extension region 11EB are formed to partially overlap the n-typepocket implanted regions 11 pc.

The source extension region 11EA and drain extension region 11ED are ofp-type, and in contact with p-type diffusion regions 11Sp and 11Dp,respectively, which form a source region 11S and a drain region 11D ofthe p-channel MOS transistor 10, respectively. The p-type diffusionregions 11Sp and 11Dp enclose the SiGe mixed crystal layers 19A and 19B,respectively, which are portions of the source region 11S and the drainregion 11D. Due to this structure, the p-type SiGe mixed crystal layers19A and 19B having a small band-gap do not directly contact the n-typewell 11 n, and this reduces a leakage current in a pn junction at theinterface between Si and SiGe.

Silicide layers 20A and 20B are formed on the SiGe mixed crystal layers19A and 19B, respectively, and a silicide layer 20C is formed on thegate electrode 14. Because the silicide layers 20A, 20B, and 20C areactually reaction products between metals and the SiGe mixed crystallayers 19A and 19B, the silicide layers 20A, 20B, and 20C includemetal-germano-silicide and metal-silicide. Below, for descriptiveconvenience, it is simply described that the silicide layers 20A, 20B,and 20C are formed from “silicide”.

Although not illustrated, a silicon layer including p-type impuritiesare formed on the SiGe mixed crystal layers 19A and 19B, and a silicidelayer may be formed on the silicon layer, that is, converting thesurface of the silicon layer into silicide. This Ge-free silicide layeris superior in thermal resistance compared to the above silicide layerswhich consume the SiGe mixed crystal layers 19A and 19B directly.

In the p-channel MOS transistor 10 shown in FIG. 3, each of the SiGemixed crystal layers 19A and 19B has a side surface 19 b and a bottomsurface 19 c, which demarcate the SiGe mixed crystal layers 19A and 19B.The side surface 19 b or the bottom surface 19 c is a flat facet. Thebottom surface 19 c is in a (100) plane parallel to the principal planeof the silicon substrate 11, and the side surface 19 b is nearlyperpendicular to the bottom surface 19 c. Due to this, the side surface19 b of the SiGe mixed crystal layer 19A and the side surface 19 b ofthe SiGe mixed crystal layer 19B, which face each other, are nearlyperpendicular to the principal plane of the silicon substrate 11, andthis structure can effectively confine the uniaxial compressive stressin the channel region.

Preferably, the concentration of Ge in the SiGe mixed crystal layers 19Aand 19B is in a range from 20 atom % to 40 atom %, because with theconcentration of Ge greater than 20 atom %, a strong compressive stresscan be imposed on the channel region, and dislocation defects arepreventable on the interface between the silicon substrate 11 and theSiGe mixed crystal layers 19A and 19B.

According to experimental results in the present invention, in thedevice region 11A of the semiconductor device, it is found that evenwhen the thickness of the semiconductor layer constituting the SiGemixed crystal layers 19A and 19B, which are formed in regions havinglimited areas, grows to be greater than a so-called critical filmthickness, sometimes, quality of the growing semiconductor layer doesnot deteriorate. This is different from a model of two-dimensionalcontinuous epitaxial growth. In addition, it is found that even when theconcentration of Ge is increased to be higher than a criticalconcentration, and it is thought that this critical concentration maycause dislocation defects, sometimes, quality of the growingsemiconductor layer does not deteriorate. Further, it is found that theeffective critical film thickness increases when the growing temperatureis lowered, and in the present invention, with thin films of the SiGemixed crystal layers 19A and 19B, which are selectively grown locally ata low temperature, it is possible to effectively impose deformation onthe channel. From this experiment, it is found that the SiGe mixedcrystal layers 19A and 19B can be epitaxially grown when theconcentration of Ge in the SiGe mixed crystal layers 19A and 19B is tobe lower than or equal to 40 atom %.

It is known that in the SiGe mixed crystal layers 19A and 19B having ahigh Ge concentration, the solubility limit of Boron increases, andconcentration of the impurities can be as high as 1×10²² cm⁻³.Concentration of the impurities in the SiGe mixed crystal layers 19A and19B is set to be in a range from 1×10¹⁹ cm⁻³ to 1×10²¹ cm⁻³. Due tothis, it is possible to reduce the resistance of the SiGe mixed crystallayers 19A and 19B.

The SiGe mixed crystal layers 19A and 19B have extended portions 19Aa,19Ba, which are formed on the respective sides of the first side wallinsulating films 16A and 16B below the bottom surface of the second sidewall insulating films 18A, 18B and covering the surface of the siliconsubstrate 11. The extended portions 19Aa and 19Ba are in contact withthe source extension region 11EA and the drain extension region 11EB,respectively. As described below, since the SiGe mixed crystal layers19A and 19B are low resistance CVD films including p-type impurities ofhigh activity, due to the extended portions 19Aa and 19Ba, strayresistance can be greatly reduced. As a result, the short channel effectdoes not occur, and the current driving capability of the p-channel MOStransistor 10 is improved.

The extended portions 19Aa and 19Ba are epitaxially grown on the siliconsubstrate 11 just below the extended portions 19Aa and 19Ba. Inexperiments performed in the present invention, the inventors of thepresent invention found that by deformation analysis by means ofconverged electron diffraction and corresponding high order diffractedelectron beams, a stretching stress is imposed on the silicon substrate11 just below the SiGe mixed crystal layers 19A and 19B in the gatelength direction. Therefore, it is highly expected that the extendedportions 19Aa and 19Ba induce a stretching stress in the gate lengthdirection in the silicon substrate 11 just below the extended portions19Aa and 19Ba. In this case, because the side surfaces 19 b are fixed bythe SiGe mixed crystal layers 19A and 19B, it is believed that theextended portions of the SiGe mixed crystal layers 19A and 19B inducestretching deformation in the source extension region 11EA and the drainextension region 11EB, and the stretching deformation generates stressopposite to the silicon crystal in the channel region. As a result, inthe p-channel MOS transistor 10 shown in FIG. 3, because of the extendedportions 19Aa and 19Ba, which are in contact with the source extensionregion 11EA and the drain extension region 11EB, it is possible tofurther increases the hole mobility.

The extended portions 19Aa and 19Ba are formed to fill up a spacebetween the second side wall insulating films 18A and 18B and thesurface of the silicon substrate 11. In addition, because of theextended portions 19Aa and 19Ba, the SiGe mixed crystal layers 19A and19B grow continuously on outer surfaces of the second side wallinsulating films 18A and 18B from the extended portions 19Aa and 19Ba.Therefore, the SiGe mixed crystal layers 19A and 19B are in closecontact with the second side wall insulating films 18A and 18B, and theextended portions 19Aa and 19Ba of the SiGe mixed crystal layers 19A and19B cover ends of the first side wall insulating films 16A and 16B.Consequently, during HF processing in a step of forming a silicide film,the first side wall insulating films 16A and 16B are not eroded, and itis possible to prevent a silicide spike from being formed in the siliconsubstrate 11. Especially, when nickel is used to form the silicidelayer, it is difficult to induce a silicide reaction of nickel on SiGecompared to a silicide reaction on Si. However, because of the extendedportions 19Aa and 9Ba, it is possible to effectively prevent nickel frombeing diffused to the source extension region 11EA and the drainextension region 11EB. Consequently, it is possible to prevent directcontact of the silicide layers 20A and 20B with the n-well 11 n, andreduce the leakage current.

It is preferable that the extended portions 19Aa and 19Ba be at adistance from the channel region and the gate insulating film 13 justabove the channel region. The reasons are described below. When theextended portions 19Aa and 19Ba of the SiGe mixed crystal layers 19A and19B are in proximity of the channel region and the gate insulating film13 just above the channel region, Ge atoms in the SiGe mixed crystallayers 19A and 19B diffuse in the channel region in a heat treatment insubsequent processing, and probably cause spread of the channel current.In addition, Ge atoms in the SiGe mixed crystal layers 19A and 19B maydiffuse into the gate insulating film 13, and lower reliability of thegate insulating film 13. Considering stray resistance, or magnitude ofthe stress, protection to the first side wall insulating films 16A and16B during a HF treatment, and device degradation due to diffusion of Geatoms, the longitudinal length of the extended portions 19Aa and 19Ba,and the distances between the extended portions 19Aa and 19Ba and thegate insulating film 13 are appropriately determined.

The SiGe mixed crystal layers 19A and 19B are grown to be higher thanthe interface between the silicon substrate and the gate insulating film13 by 5 nm to 40 nm. Due to this, it is possible to effectively inducethe compressive stress.

When the silicide layers 20A and 20B are formed from nickel silicide,because generally the nickel silicide layers induce a stretching stresson the channel, this stretching stress tends to cancel out thecompressive stress, However, because the silicide layers 20A and 20B areformed on the SiGe mixed crystal layers 19A and 19B, and at positionsmuch higher than the interface between the silicon substrate and thegate insulating film 13, the stretching stress induced in the silicidelayers 20A and 20B cannot cancel out the compressive stress induced inthe channel region.

It is preferable that the gate electrode 14 extend on the siliconsubstrate 11 nearly in the direction <110>, but the gate electrode 14may also extend nearly in the direction <100>.

In the p-channel MOS transistor 10 shown in FIG. 3, enhancement of holemobility due to application of the compressive stress on the channelregion is noticeable when the silicon substrate 11 is a so-called (100)substrate, and the gate length direction on the silicon substrate 11 isalong the <110> direction or the <100> direction, especially, when inthe <110> direction. Here, the <100> direction includes the [100]direction and directions equivalent to the [100] direction in a diamondstructure. The same is true for the <110> direction.

Below, a method of fabricating the semiconductor device 10 in FIG. 3 isexplained with reference to FIG. 4A through FIG. 4C, and FIG. 5A andFIG. 5B.

FIG. 4A through FIG. 4C are cross-sectional views illustrating portionsof the semiconductor device 10 in FIG. 3 for illustrating a method offabricating the semiconductor device 10 according to the presentembodiment of the present invention.

In the step shown in FIG. 4A, on the p-type silicon substrate 11, thedevice region 11A is demarcated by the element separation region 12,which is a STI-type; n-type impurities are implanted into the deviceregion 11A, thereby, the n-type Si well 11 n is formed corresponding tothe device region 11A.

Next, in the step shown in FIG. 4B, on the silicon substrate 11,corresponding to the device region 11A, the gate insulating film 13 andthe gate electrode 14 are formed from patterning of a SiON film and apoly-silicon film, which are uniformly formed on the silicon substrate11.

Then, with the gate electrode 14 as a mask, Sb or other n-typeimpurities are implanted obliquely in the device region 11A, thereby,forming the pocket implantation regions 11 pc as shown in FIG. 3. InFIG. 4B and the subsequent drawings, the pocket implantation regions 11pc are not illustrated.

Then, with the gate electrode 14 as a mask, boron (B) or other p-typeimpurities are implanted in the device region 11A, thereby forming thesource extension region 11EA and the drain extension region 11EB.

Then, the first side walls 16A and 16B and the second side-wallinsulating films 18A and 18B are formed on the gate electrode 14.Further, boron (B) or other p-type impurities are implanted, and p-typediffusion regions 11Sp and 11Dp are formed outside the second side-wallinsulating films 18A and 18B in the device region 11A in the siliconsubstrate 11.

Next, in the step shown in FIG. 4C, in the silicon substrate 11, aportion of the device region 11A outside the second side-wall insulatingfilms 18A and 18B is etched by dry etching to a depth of 10 to 60 nm.Due to the etching process, trenches 111A and 111B are formed in thedevice region 11A, which are demarcated by the side surface 19 b nearlyperpendicular to the principal plane of the silicon substrate 11 and theside surface 19 c nearly parallel to the principal plane of the siliconsubstrate 11.

FIG. 5A and FIG. 5B are cross-sectional views illustrating portions ofthe semiconductor device 10 in FIG. 3 continuing from FIG. 4C forillustrating the method of fabricating the semiconductor device 10 ofthe present embodiment of the present invention.

In the step shown in FIG. 5A, portions of the first side wall insulatingfilms 16A, 16B, which are formed from silicon oxide films, are removedby isotropic etching, and below the bottom surface of the second sidewall insulating films 18A and 18B, the surface of the silicon substrate11 is exposed, forming spaces 16A1 and 16B1, which are like slits alongthe gate width direction.

Here, in the isotropic etching, a water solution of HF (for example, theconcentration of HF is 5 volume %) or HF vapor is used. Here, as long asthe first side wall insulating films 16A, 16B can be selectively etchedby the isotropic etching, there are no limitations to the conditions ofthe isotropic etching. During the isotropic etching, the first side wallinsulating films 16A, 16B on the gate electrode 14 are also etched, andforming openings 16A2 and 16B2.

It is preferable that the spaces 16A1 and 16B1 be formed by theisotropic etching such that a large portion of the surface of thesilicon substrate 11, on which the source extension region 11EA and thedrain extension region 11EB are formed, are exposed through the spaces16A1 and 16B1, and the spaces 16A1 and 16B1 do not reach the gateinsulating film 13.

For example, in FIG. 5A, each of the first side wall insulating films16A, 16B may be formed to be L-shaped, and cover side surfaces of thegate insulating film 13 and the gate electrode 14.

In the isotropic etching, the amount of the first side wall insulatingfilms 16A, 16B to be removed is determined by the etching time orconcentration of HF, and the isotropic etching is performed in such away that the side surfaces of the gate insulating film 13 and the gateelectrode 14 are not exposed.

In the isotropic etching, native oxide films on the trenches 111A and111B are also removed.

Next, in the step shown in FIG. 5B, the substrate with the structure inFIG. 5A being formed thereon is introduced in a low pressure CVD device,which is filled with hydrogen gas, nitrogen gas, or argon gas, heliumgas or other inactive gases, and is maintained at a pressure from 5 to1330 Pa.

Then, after the temperature is increased to 400 to 550° C. in a hydrogenatmosphere, the pressure is maintained in a range from 5 to 1330 Pa for5 minutes, to execute baking of the substrate in the hydrogenatmosphere.

Then, at a substrate temperature of 400 to 550° C., and with partialpressures of hydrogen gas, nitrogen gas, or argon gas, helium gas orother inactive gases being in a range from 5 to 1330 Pa, the followinggases are supplied in a period from 1 to 40 minutes, that is, a silane(SiH₄) gas (as a gas-phase material of silicon) with the partialpressure in a range from 1 to 10 Pa, a germane (GeH₄) gas (as agas-phase material of Ge) with the partial pressure in a range from 0.1to 10 Pa, a diborane (B₂H₆) gas (as a dopant gas) with the partialpressure in a range from 1×10⁻⁵ to 1×10⁻³ Pa, and a HCl (hydrogenchloride) gas (as a precursor which enhances selectivity) with thepartial pressure in a range from 1 to 10 Pa. Consequently, p-type SiGemixed crystal layers 19A and 19B are epitaxially grown in the trenches111A and 111B.

At the same time, the extended portions 19Aa, 19Ba of the SiGe mixedcrystal layers 19A and 19B. are formed in the spaces 16A1 and 16B1 belowthe bottom surfaces of the second side wall insulating films 18A, 18B.Further, the SiGe mixed crystal layers 19A and 19B grow upward whilebeing in close contact with the side surfaces of the second side-wallinsulating films 18A, 18B. At the same time, the SiGe mixed crystallayer 19C is also formed on the surface of the gate electrode 14.

Next, after the step in FIG. 5B, the surfaces of the SiGe mixed crystallayers 19A and 19B, and the SiGe mixed crystal layer 19C on the surfaceof the gate electrode 14 are converted to silicide layers. Specifically,the surface of the structure in FIG. 5B is treated by using HF to removenative oxide films on the surface. Then, for example, a nickel film isformed by sputtering to cover the structure in FIG. 5B. Then, a RTP(Rapid Thermal Process) device is used to perform a heat treatment (at400 to 500° C.) to induce reactions with the source region 19A, thedrain region 19B, and a SiGe mixed crystal layer 19C on the gateelectrode 14, for example, forming a nickel silicide layer (includegermano-silicide) having a thickness of 20 nm.

Then, the un-reacted nickel film is etched by wet etching using amixture of ammonia and hydrogen peroxide (first treatment), and isfurther etched by wet etching using a mixture of sulfuric acid andhydrogen peroxide (second treatment), thus the un-reacted nickel film isremoved. Where necessary, one or more wet etching steps can be omitted.Then, where necessary, the RTP device is used to perform a heattreatment at 400 to 500° C.

Here, instead of the nickel silicide films, Co, Ta, Ti, or PT silicidefilms may be formed.

In this way, the p-channel MOS transistor 10 in FIG. 3 is fabricated.

In the method of the present embodiment, because the SiGe mixed crystallayers 19A and 19B are formed by CVD with p-type impurities as dopants,an activation rate of the impurities is nearly 100% even without a heattreatment. This rate is higher than the activation rate of theimpurities implanted by ion implantation. Therefore, the SiGe mixedcrystal layers 19A and 19B have low resistance, and the extendedportions 19Aa and 9Ba are in contact with the source extension region11EA and the drain extension region 11EB, respectively, so that thestray resistance can be reduced greatly, and the current drivingcapability of the p-channel MOS transistor 10 is improved.

In the step of forming a silicide film to remove the native oxide filmson the SiGe mixed crystal layers 19A and 19B by treatment using HF, itis possible to prevent the extended portions 19Aa and 19Ba of the SiGemixed crystal layers 19A and 19B from contacting the first side wallinsulating. films 16A and 16B; therefore, the first side wall insulatingfilms 16A and 16B are not eroded, and the surface of the siliconsubstrate 11 is not exposed. Further, when the silicide layers areformed from nickel silicide, it is difficult to induce a silicidereaction of nickel on SiGe compared to a silicide reaction of nickel onSi. Hence, it is possible to prevent a silicide spike from being formedin the n-well 11 n.

In the step shown in FIG. 5B, instead of the processing described above,at an initial stage of growth of the SiGe mixed crystal layers 19A and19B, the partial pressure of the germane (GeH₄) gas (as a gas-phasematerial of Ge) may be set relatively low, and along with growth of theSiGe mixed crystal layers 19A and 19B, the partial pressure of thegermane (GeH₄) gas may be increased successively. Due to this, it ispossible to prevent dislocation in the interface between the siliconsubstrate 11 and the SiGe mixed crystal layers 19A and 19B, andeffectively form horizontal compressive deformation inside the SiGemixed crystal layers 19A and 19B.

After the step shown in FIG. 5B, before the step of forming a silicidefilm, p-type semiconductor layers primarily including Si may bedeposited on the SiGe mixed crystal layers 19A and 19B. By siliciding ap-type semiconductor layer primarily including Si, it is possible toprevent degradation of thermal resistance or morphology, which occurseasily in siliciding process when the concentration of Ge is high in theSiGe mixed crystal layers 19A and 19B.

Specifically, at a temperature the same as or lower than that of theSiGe mixed crystal layers 19A and 19B, a silane (SiH₄) gas with apartial pressure in a range from 1 to 10 Pa, a diborane (B₂H₆) gas witha partial pressure in a range from 1×10⁻⁴ to 1×10⁻² Pa, and a HCl(hydrogen chloride) gas with a partial pressure in a range from 1 to 10Pa are supplied together, and a p-type semiconductor layer of athickness less than 20 nm is formed on the SiGe mixed crystal layers 19Aand 19B.

Because the p-type semiconductor layer is provided for consideration ofthe subsequent siliciding step, it is preferable that the p-typesemiconductor layer be a p-type silicon layer which can be easilysilicided, but the p-type semiconductor layer may include Ge of aconcentration lower than the concentration of Ge in the SiGe mixedcrystal layers 19A and 19B. When the p-type semiconductor layer includesGe, in growth of the p-type semiconductor layer, a GeHe₄ gas with apartial pressure from 0 to 0.4 Pa may be supplied.

As described above, in the p-channel MOS transistor 10 in FIG. 3,because p-type SiGe mixed crystal layers 19A, 19B are epitaxially grownon the sides of the channel region, a uniaxial compressive stress isapplied on the channel region. Because the side surface 19 b of the SiGemixed crystal layer 19A and the side surface 19 b of the SiGe mixedcrystal layer 19B, which face each other, are nearly perpendicular tothe principal plane of the silicon substrate 11, it is possible toinduce the compressive stress effectively in the channel region.

In addition, because SiGe mixed crystal layers 19A, 19B have extendedportions 19Aa and 19Ba, which are in contact with the source extensionregion 11EA and the drain extension region 11EB, it is expected that theextended portion 19Aa and 19Ba can reduce extension resistance, and theextended portion 19Aa and 19Ba apply a stretching stress in the gatelength direction on the silicon substrate just below the extendedportion 19Aa and 19Ba. Due to this, it is expected that a compressivestress be applied indirectly on the channel region, thus furtherstrengthening the compressive stress applied on the channel region. As aresult, it is possible to improve the current driving capability of thep-channel MOS transistor 10.

Second Embodiment

FIG. 6 is a cross-sectional view illustrating an example of asemiconductor device 30 according to a second embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiment, andoverlapping descriptions are omitted.

The semiconductor device 30 shown in FIG. 6 is a p-channel MOStransistor. The p-channel MOS transistor 30 is basically the same as thep-channel MOS transistor 10 of the first embodiment except that sidesurfaces 19 d of the trenches 111A and 111B in the silicon substrate 11are formed from facets along a Si (111) plane.

In the p-channel MOS transistor 30, each of the trenches 111A and 111Bin the silicon substrate 11 includes the bottom surface 19 c which isnearly parallel to the principal plane of the silicon substrate 11, andthe side surface 19 d which is formed from the facet along the Si (111)plane at an angle of 56° relative to the bottom surface 19 c.

The p-type SiGe mixed crystal layers 19A and 19B are grown epitaxiallyin the trenches 111A and 111B to fill up the trenches 111A and 111B,respectively.

The same as the first embodiment, the SiGe mixed crystal layers 19A and19B have extended portions 19Aa, 19Ba, which cover the surface ofportions of the silicon substrate 11 where the source extension region11EA and the drain extension region 11EB are formed. The SiGe mixedcrystal layers 19A and 19B grow upward along outer surfaces of thesecond side wall insulating films 18A and 18B.

The p-channel MOS transistor 30 has the same effects as the p-channelMOS transistor 10 in the first embodiment; additionally, in thep-channel MOS transistor 30, because the facets along the Si (111) planeare formed along impurity concentration profiles in the source region11S and the drain region 11D, and the source extension region 11EA andthe drain extension region 11EB, the SiGe mixed crystal layers 19A and19B are formed in proximity of the channel region while disturbing theimpurity concentration profiles. Therefore, it is possible to moreeffectively induce the compressive stress in the channel region.

Below, a method of fabricating the semiconductor device 30 in FIG. 6 isexplained with reference to FIG. 7A and FIG. 7B.

FIG. 7A and FIG. 7B are cross-sectional views illustrating portions ofthe semiconductor device 30 in FIG. 6 for illustrating a method offabricating the semiconductor device 30 according to the secondembodiment of the present invention.

In the step shown in FIG. 7A, processes shown in FIG. 4A through FIG. 4,and FIG. 5A in the first embodiment are performed.

In the structure fabricated so far, each of the trenches 111A and 111Bincludes the bottom surface 19 c and the side surface 19 b which isnearly perpendicular to the bottom surface 19 c; the spaces 16A1 and16B1 are formed below the bottom surface of the second side wallinsulating films 18A and 18B and on the surface of the silicon substrate11; and the openings 16A2 and 16B2 are formed beside the upper portionof the gate electrode 14.

Further, in the step shown in FIG. 7A, the vertical side surface 19 b isetched to form the facet in the Si (111) plane at an angle of 56°relative to the principal plane of the silicon substrate 11. In thisetching process, wet etching is performed using organic alkali etchants(for example, tetramethyl ammonium hydroxide, such as TMAH, choline), orammonium hydroxide. Alternatively, the etching process is performed by aheat treatment in a hydrogen and HCl atmosphere at 800° C.

The facet is formed so that the upper end of the side surface 19 d doesnot reach the gate insulating film 13. For this purpose, the sidesurface 19 d is formed to extend upward and obliquely at an angle of 56°relative to the bottom surface 19 c from an intersection line 19 e ofthe bottom surface 19 c and the vertical side surface 19 b of thetrenches 111A and 111B. Therefore, the position at which to form thevertical side surface 19b is appropriately selected in the step in FIG.4C.

The side surface 19 d is at a position enclosed by the source region 11Sand the drain region 11D, and the source extension region 11EA and thedrain extension region 11EB so as not to penetrate the n-well 11 n.

Next, in the step shown in FIG. 7B, the SiGe mixed crystal layers 19Aand 19B are formed in the same way as shown in FIG. 5B. Then, asiliciding step is performed as described above. In this way, thep-channel MOS transistor 30 in FIG. 6 is fabricated.

In the method of the present embodiment, the SiGe mixed crystal layers19A and 19B fill up the trenches 111A and 111B, the extended portions19Aa and 19Ba are formed, and the SiGe mixed crystal layers 19A and 19Bgrown upward are in close contact with outer surfaces of the second sidewall insulating films 18A and 18B. Therefore, it is possible to preventexposure of the surface of the silicon substrate 11 during HF treatmentin the siliciding step, and it is possible to prevent a silicide spikefrom being formed in the n-well 11 n in the siliciding step. Further,when the silicide layers are formed by using nickel, it is difficult toinduce a silicide reaction of nickel on SiGe compared to a silicidereaction of nickel on Si, so that formation of the silicide spike in then-well 11 n can be prevented effectively.

Third Embodiment

FIG. 8 is a cross-sectional view illustrating an example of asemiconductor device 40 according to a third embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 40 shown in FIG. 8 is a p-channel MOStransistor. The p-channel MOS transistor 40 is basically the same as thep-channel MOS transistor 10 of the first embodiment except that a sidesurface 19 d and a side surface 19 f of the trenches 111A and 111B inthe silicon substrate 11 are formed from facets along Si (111) planes ofdifferent orientation.

In the p-channel MOS transistor 40, each of the trenches 111A and 111Bin the silicon substrate 11 includes the bottom surface 19 c nearlyparallel to the principal plane of the silicon substrate 11, the sidesurface 19 d which is formed from the facet in the Si (111) plane at anangle of 56° relative to the bottom surface 19 c, and extends inward,and a side surface 19 f formed from a facet in a Si (111) plane at anangle of 124° relative to the bottom surface 19 c. The side surface 19 fextends inward from the surface of the silicon substrate 11, which isalso the interface between the silicon substrate 11 and the gateinsulating film 13.

The side surface 19 d and the side surface 19 f intersect, therebyforming a wedge shape facing inward.

The p-type SiGe mixed crystal layers 19A and 19B are grown epitaxiallyin the trenches 111A and 111B to fill up the trenches 111A and 111B,respectively. The same as the first embodiment, the SiGe mixed crystallayers 19A and 19B have extended portions 19Aa, 19Ba, which cover thesurface of portions of the silicon substrate 11 where the sourceextension region 11EA and the drain extension region 11EB are formed.The SiGe mixed crystal layers 19A and 19B are in contact with the bottomsurfaces of the second side wall insulating films 18A and 18B, and growupward along outer surfaces of the second side wall insulating films 18Aand 18B.

In the SiGe mixed crystal layers 19A and 19B, a front end 19 g of thewedge, which is the intersection line of the side surface 19 d and theside surface 19 f, is formed at an inside position relative to the outersurface of the second side wall insulating films 18A or 18B, and theSiGe mixed crystal layers 19A and 19B are near the channel region justbelow the gate electrode 14. However, the front end 19 g of the wedge isformed so as not to penetrate into inside of the n-well 11 n from thesource region 11S and the drain region 11D; thus the interval betweenthe SiGe mixed crystal layers 19A and 19B is smaller than that in theprevious embodiments.

The p-channel MOS transistor 40 has the same effects as the p-channelMOS transistor 10 in the first embodiment; additionally, in thep-channel MOS transistor 40, it is possible to induce a strongercompressive stress in the channel region than those in the p-channel MOStransistors 10 and 30. Thus, it is possible to further increase the holemobility and improve the current driving capability of the p-channel MOStransistor 40.

Below, a method of fabricating the semiconductor device 40 in FIG. 8 isexplained with reference to FIG. 9A through FIG. 9C.

FIG. 9A through FIG. 9C are cross-sectional views illustrating portionsof the semiconductor device 40 in FIG. 8 for illustrating a method offabricating the semiconductor device 40 according to the thirdembodiment of the present invention.

In the step shown in FIG. 9A, processes shown in FIG. 4A through FIG. 4Cin the first embodiment are performed.

In the structure fabricated so far, in the device region outside thesecond side wall insulating films 18A and 18B, each of the trenches 111Aand 111B includes the bottom surface 19 c and the side surface 19 bnearly perpendicular to the bottom surface 19 c. At this stage, theposition of the intersection line between the side surface 19 b and thebottom surface 19 c of the trenches 111A and 111B is defined, and theposition of ends 19 h of the first side wall insulating films 16A and16B are defined. Because these positions define starting positions offacets in two different Si (111) planes, which are formed in the nextstep, the side surface 19 b and the bottom surface 19 c are formed sothat desired side surface can be formed in the next step.

It should be noted that it is not required that the side surface 19 b beperpendicular to the bottom surface 19 c; hence, starting positions offacets in Si (111) planes can be defined flexibly.

Further, in the step shown in FIG. 9A, the vertical side surface 19 b isetched to form the side surface 19 d and side surface 19 f, which areformed from two facets. The same as the step in FIG. 7A, in this etchingprocess, wet etching is performed using organic alkali etchants (forexample, tetramethyl ammonium hydroxide, such as TMAH, choline), orammonium hydroxide. Alternatively, the etching process is performed by aheat treatment in a hydrogen and HCl atmosphere at 800° C.

As a result, both the side surface 19 d and the side surface 19 f areformed from facets in the Si (111) planes, but the side surface 19 d isformed from a facet in a Si (111) plane at an angle of 56° relative tothe principal plane of the silicon substrate 11, and the side surface 19f is formed from a facet in a Si (111) plane at an angle of 124°relative to the principal plane of the silicon substrate 11.

Because the side surface 19 d is formed from a facet in the Si (111)plane, once the position of the intersection line 19 e of the bottomsurface 19 c and the vertical side surface 19 b (refer to FIG. 4C) isdefined, the side surface 19 d can be formed as controlled. On the otherhand, because the side surface 19 f is also formed from a facet in theSi (111) plane, once the position of the ends 19 h of the first sidewall insulating films 16A and 16B are defined, the side surface 19 f canbe formed as controlled.

Therefore, because the front end 19 g of the wedge, which is theintersection line of the side surface 19 d and the side surface 19 f,can be formed as controlled, it is possible to prevent the front end 19g of the wedge from penetrating into the inside of the n-well 11 n fromthe source region 11S and the drain region 11D, and prevent the impurityprofiles from be disturbed.

Next, in the step shown in FIG. 9B, portions of the first side wallinsulating films 16A, 16B are removed by isotropic etching, in the sameway as shown in FIG. 5B.

Next, in the step shown in FIG. 9C, the SiGe mixed crystal layers 19Aand 19B are formed in the same way as shown in FIG. 5B. The SiGe mixedcrystal layers 19A and 19B fill up the trenches 111A and 111B,respectively, and at the same time, nearly fill up the spaces 16A1 and16B1 between the bottom surfaces of the second side wall insulatingfilms 18A, 18B and the surface of the silicon substrate 11 in the sameway as in the first embodiment, and grow along outer surfaces of thesecond side wall insulating films 18A and 18B.

Then, silicide layers 20A through 20C are formed in the same way asdescribed above. In this way, the p-channel MOS transistor 40 in FIG. 8is fabricated.

In the method of the present embodiment, because the trenches 111A and111B including the bottom surface 19 c and the vertical side surface 19b are formed to define starting positions of etching, and the etching isperformed so that the Si (111) plane is selectively exposed, the sidesurfaces of the projecting wedge, which face inward, can be formed ascontrolled. Therefore, it is possible to prevent the short channeleffect, while increasing the compressive stress; thus it is possible toincrease the hole mobility in the channel region and improve the currentdriving capability of the p-channel MOS transistor 40.

Fourth Embodiment

FIG. 10 is a cross-sectional view illustrating an example of asemiconductor device 50 according to a fourth embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 50 shown in FIG. 10 is a p-channel MOStransistor. The p-channel MOS transistor 50 is basically the same as thep-channel MOS transistor 10 of the first embodiment except that thestructure of an element separation region is different.

In the p-channel MOS transistor 50, an element separation region 52includes a HF resistance film 52C formed on a surface of an elementseparation groove 112, a CVD oxide film 52B which covers the HFresistance film 52C and fills up the element separation groove 112, anda HF resistance film 55 which covers the CVD oxide film 52B.

The HF resistance films 52C and 55 may be SiN films, SiOCN films, orSiCN films. Especially, it is preferable to use SiOCN films or SiCNfilms because they are superior in HF resistance.

In the element separation region 52, because the HF resistance films 52Cand 55 cover the whole CVD oxide film 52B, which is used to remove anative oxide film, subduction of the element separation region ispreventable, which is caused by a HF treatment repeatedly executed toremove the native oxide film on the silicon substrate 11.

As described in methods of fabricating semiconductor devices in theprevious embodiments, portions of the first side wall insulating films16A, 16B are etched by the HF treatment, and in this process, the HFtreatment may be overdone. In the present embodiment, even when the HFtreatment is overdone, erosion of the element separation region 52 ispreventable in the p-channel MOS transistor 50. Therefore, it ispossible to prevent the silicide layer of the source or the drain fromreaching the n-well 11 n in the silicon substrate 11, and preventjunction leakage.

Below, a method of fabricating the semiconductor device 50 in FIG. 10 isexplained with reference to FIG. 11A through FIG. 11C, FIG. 12A throughFIG. 12C, and FIG. 13.

FIG. 11A through FIG. 11C are cross-sectional views illustratingportions of the semiconductor device 50 in FIG. 10 for illustrating amethod of fabricating the semiconductor device 50 according to thefourth embodiment of the present invention.

Here, it is assumed that the HF resistance films 52C and 55 are SiOCNfilms or SiCN films.

In the step shown in FIG. 11A, on the silicon substrate 11, a sacrificeoxide film 53 is formed to a thickness of 10 nm, and then a SiN film isformed on the sacrifice oxide film 53 by thermal CVD at a substratetemperature of 775° C. to a thickness of 105 nm.

The SiN film 54 is patterned. With the obtained SiN pattern 54 as amask, the element separation groove 112 is formed in the siliconsubstrate 11 to demarcate the device region 11A.

Next, in the step shown in FIG. 11B, a thermal oxide film 52A is formedon the side surface and bottom surface of the element separation groove112 to a thickness of 3 nm.

Then, as the HF resistance film 52C, a SiOCN film or a SiCN film isformed to a thickness of 20 nm by LPCVD (Low Pressure CVD) with BTBAS(bis(tertiary-butylamino)silance)) as a stock material so as to coverthe thermal oxide film 52A located on the side surface and bottomsurface of the element separation groove 112.

Chemical formula of BTBAS is below.

In LPCVD, reactions as expressed by the following reaction formulae takeplace.SiH₂[NH(C₄H₉)]₂+O₂->SiO_(x)C_(y)N_(z)orSiH₂[NH(C₄H₉)]₂+N₂O->SiO_(x)C_(y)N_(z)

and a SiOCN film described by SiO_(x)C_(y)N_(z) is formed. The SIOCNfilm obtained in this way includes C having concentration higher thandopant concentration. For example, according to analysis results of theobtained SiOCN film, it is found that ratio of Si, O, N, and C in theobtained SiOCN film is 2:2:2:1.

If ammonia is used instead of O2 or N2O in the above reactions, thefollowing reaction takes place.SiH₂[NH(C₄H₉)]₂+NH₃->SiC_(x)N_(y)and a SiCN film described by SiC_(x)N_(y) is formed.

Further, in the step shown in FIG. 11B, by high density plasma CVD, theCVD oxide film 52B is deposited on the HF resistance film 52C to fill upthe element separation groove 112. Then, the CVD oxide film 52Bdeposited on the SiN pattern 54 is polished and removed by CMP (ChemicalMechanical Polishing); thereby, the height of the CVD oxide film 52B isthe same as the height of the SiN pattern 54.

Next, in the step shown in FIG. 11C, the CVD oxide film 52B is subjectto the HF treatment, that is, the CVD oxide film 52B is etched by wetetching using HF, and as a result, the CVD oxide film 52B is lowered by80 nm to 120 nm.

FIG. 12A through FIG. 12C are cross-sectional views illustratingportions of the semiconductor device 50 in FIG. 10 continuing from FIG.11C for illustrating the method of fabricating the semiconductor device50 of the present embodiment of the present invention.

Next, in the step shown in FIG. 12A, on the structure shown in FIG. 11C,as the HF resistance film 55, a SiOCN film or a SiCN film is depositedby LPCVD with BTBAS (bis(tertiary-butylamino)silance)) as stockmaterial.

The HF resistance film 55 is deposited to a thickness so as to be at thesame height as the surface of the silicon substrate 11.

Next, in the step shown in FIG. 12B, by high density plasma CVD, asilicon oxide film is deposited on the structure shown in FIG. 12A.Then, the silicon oxide film is polished and removed by CMP, andthereby, a silicon oxide film pattern 56 is formed on the HF resistancefilm 55 corresponding to the element separation groove 112.

Next, in the step shown in FIG. 12C,

With the silicon oxide film pattern 56 as a mask, the HF resistance film55 and the SiN pattern 54 below the HF resistance film 55 are dissolvedand removed by thermal-phosphate treatment. Then, the silicon oxide filmpattern 56 is removed by wet etching using HF. Here, because the SiOCNfilm or the SiCN film is soluble in thermal-phosphate, and has etchingspeed similar to or slightly slower than that of SiN, in thethermal-phosphate treatment, even when the SiN pattern is removed,before that, the HF resistance films 52C and 55 are removed in theelement separation groove 112, and thus, the CVD oxide film 52B will notbe exposed at all. In addition, a portion of the HF resistance film 55may be projected after the thermal-phosphate treatment, forming aprojection 55 a. In this case, the HF resistance film 55 may beflattened by CMP. In this way, the element separation region 52 isformed, in which the CVD oxide film 52B as a whole is covered by the HPresistance films 52C and 55.

FIG. 13 is a cross-sectional view illustrating a portion of thesemiconductor device 50 continuing from FIG. 12C for illustrating themethod of fabricating the semiconductor device 50 of the presentembodiment of the present invention.

In the step shown in FIG. 13, in the device region 11A in FIG. 12C,processes shown in FIG. 4A through FIG. 4C, and FIG. 5A in the firstembodiment are performed. That is, n-type impurities are implanted intothe device region 11A (FIG. 4A); the gate insulating film 13, the gateelectrode 14, the source extension region 11EA, the drain extensionregion 11EB, the first side walls 16A and 16B, the second side-wallinsulating films 18A and 18B are formed (FIG. 4B); trenches 111A and111B are formed in the device region 11A (FIG. 4C); and portions of thefirst side wall insulating films 16A, 16B, which are formed from siliconoxide films, are removed by isotropic etching, and the spaces 16A1 and16B1 are formed by exposing the surface of the silicon substrate 11below the bottom surface of the second side wall insulating films 18Aand 18B.

After the step in FIG. 13, a silicide layer is formed as shown in FIG.5B.

In this way, the p-channel MOS transistor 50 in FIG. 10 is fabricated.

In the method of the present embodiment, in the step shown in FIG. 13,because portions of the first side wall insulating films 16A, 16B areremoved, even when the HF treatment is overdone, since the whole elementseparation region 52 is covered by the HF resistance films 52C and 55,dissolution by HF is preventable; therefore, erosion of the elementseparation region 52 is preventable, and it is possible to preventjunction leakage.

Fifth Embodiment

FIG. 14 is a cross-sectional view illustrating an example of asemiconductor device 60 according to a fifth embodiment of the presentinvention.

The semiconductor device 60 shown in FIG. 14, which is a p-channel MOStransistor, is basically the same as the p-channel MOS transistor 30 inFIG. 6 of the second embodiment except that the element separationregion 12 is replaced by the element separation region 52 in FIG. 13.Due to this, the p-channel MOS transistor 60 has the same effects as thep-channel MOS transistor 50 in FIG. 10 of the fourth embodiment.

Sixth Embodiment

FIG. 15 is a cross-sectional view illustrating an example of asemiconductor device 65 according to a sixth embodiment of the presentinvention.

The semiconductor device 65 shown in FIG. 15, which is a p-channel MOStransistor, is basically the same as the p-channel MOS transistor 40 inFIG. 8 of the third embodiment except that the element separation region12 is replaced by the element separation region 52 in FIG. 13. Due tothis, the p-channel MOS transistor 65 has the same effects as thep-channel MOS transistor 50 in FIG. 10 of the fourth embodiment.

Seventh Embodiment

FIG. 16 is a cross-sectional view illustrating an example of asemiconductor device 70 according to a seventh embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 70 shown in FIG. 16 is an n-channel MOStransistor. In the n-channel MOS transistor 70, instead of the SiGemixed crystal layers 19A and 19B in the p-channel MOS transistor 30 inFIG. 3 of the second embodiment, SiC mixed crystal layers 71A and 71Bare adopted to induce a stretching stress in the channel region.

In addition, impurities introduced into the n-channel MOS transistor 70have opposite conductivity to the impurities introduced into thep-channel MOS transistor 30 in FIG. 3, that is, the SiC mixed crystallayers 71A and 71B include n-type impurities. In addition, in then-channel MOS transistor 70, p-type impurities are. implanted into thedevice region 11A, the pocket implantation regions 11 pc, and a Si wellregion, and n-type impurities are implanted into the source extensionregion 11EA and the drain extension region 11EB, the source region 11Snand the drain region 11Dn. Except for the above points, the n-channelMOS transistor 70 is basically the same as the p-channel MOS transistor30 in FIG. 3 of the second embodiment.

In the silicon substrate 11, trenches 111A and 111B are formed outsidethe second side-wall insulating films 18A and 18B, respectively. SiCmixed crystal layers 71A and 71B including n-type impurities are grownepitaxially in the trenches 111A and 111B to fill up the trenches 111Aand 111B, respectively. The SiC mixed crystal layers 71A and 71Bepitaxially grown on the silicon substrate 11 have lattice constantsless than the silicon substrate 11, as described above with reference toFIG. 1, stress opposite to the arrows “a”, “b”, “c”, “d” are generated.As a result, a uniaxial stretching stress is applied on the channelregion just below the gate electrode 14 in the silicon substrate 11. Dueto the stretching stress, electron mobility is increased in the channelregion, and the current driving capability of the n-channel MOStransistor 70 is improved.

The same as the SiGe mixed crystal layers 19A and 19B in FIG. 3, the SiCmixed crystal layers 71A and 71B have extended portions 71Aa, 71Ba,which are formed on the respective sides of the first side wallinsulating films 16A and 16B below the bottom surface of the second sidewall insulating films 18A, 18B and covering the surface of the siliconsubstrate 11. The extended portions 71Aa and 71Ba are in contact withthe source extension region 11EA and the drain extension region 11EB,respectively. As described below, since the SiC mixed crystal layers 71Aand 71B are low resistance CVD films including n-type impurities of highactivity, due to the extended portions 71Aa and 71Ba, stray resistancecan be greatly reduced. As a result, the short channel effect does notoccur, and the current driving capability of the n-channel MOStransistor 70 is improved.

In addition, it is expected that the extended portions 71Aa and 71Bainduce a compressive stress in the gate length direction in the siliconsubstrate 11 just below the extended portions 71Aa and 71Ba. In thiscase, because the side surfaces 19 b are fixed by the SiC mixed crystallayers 71A and 71B, it is believed that the extended portions 71Aa and71Ba of the SiC mixed crystal layers 71A and 71B induce compressivedeformation in the source extension region 11EA and the drain extensionregion 11EB, and the compressive deformation generates oppositestretching stress in the silicon crystal in the channel region. As aresult, in the n-channel MOS transistor 70 shown in FIG. 16, because ofthe extended portions 71Aa and 71Ba, which are in contact with thesource extension region 11EA and the drain extension region 11EB, it ispossible to further increases the electron mobility.

Because of the good crystal property of the SiC mixed crystal layers 71Aand 71B, it is preferable that atom concentration of C be 0.1 atom % to2.0 atom % in the SiC mixed crystal layers 71A and 71B. For example, then-type impurities in the SiC mixed crystal layers 71A and 71B are P(phosphorus) or As (Arsenic), and the concentration of the n-typeimpurities is from 1×10¹⁹ cm⁻³ to 1×10²⁰ cm⁻³.

For example, the SiC mixed crystal layers 71A and 71B can be formed byusing a low pressure CVD device. The method is described below.

The processes shown in FIG. 4A through FIG. 4C, and FIG. 5A in the firstembodiment are performed. The substrate with trenches 111A and 111Bformed thereon is introduced into the low pressure CVD device, which isfilled with hydrogen gas, nitrogen gas, argon gas, helium gas, or otherinactive gases, and is maintained at a pressure from 5 to 1330 Pa.

Then, after the temperature is increased to 400 to 550° C. in a hydrogenatmosphere, the pressure is maintained in a range from 5 to 1330 Pa for5 minutes, to execute baking of the substrate in the hydrogenatmosphere.

Then, at a substrate temperature of 400 to 550° C., and with partialpressures of hydrogen gas, nitrogen gas, argon gas, helium gas, or otherinactive gases being in a range from 5 to 1330 Pa, the following gasesare supplied in a period from 1 to 40 minutes, that is, a silane (SiH₄)gas (as a gas-phase material of silicon) with the partial pressure in arange from 1 to 10 Pa, a monomethylsilane (SiH₃CH₃) gas (as a gas-phasematerial of C) with the partial pressure in a range from 0.01 to 1 Pa, aphosphine (PH₃) gas (as a dopant gas) with the partial pressure in arange from 1×10⁻⁵ to 1×10⁻² Pa, and a HCl (hydrogen chloride) gas (as aprecursor which enhances selectivity) with the partial pressure in arange from 1 to 10 Pa.

Consequently, the n-type SiC mixed crystal layers 71A and 71B areepitaxially grown in the trenches 111A and 111B. Due to this, the SiCmixed crystal layers 71A and 71B also grow in the spaces below thebottom surfaces of the second side wall insulating films 18A, 18B, andforming the extended portions 71Aa, 71Ba of the SiC mixed crystal layers71A and 71B. Further, the SiC mixed crystal layers 71A and 71B growupward while being in close contact with the side surfaces of the secondside-wall insulating films 18A, 18B.

In the n-channel MOS transistor 70 of the present embodiment, shapes ofthe side surfaces of the trenches 111A and 111B in the silicon substrate11, which trenches are filled with the SiC mixed crystal layers 71A and71B, are the same as those in the p-channel MOS transistors describedabove.

Eighth Embodiment

FIG. 17 is a cross-sectional view illustrating an example of asemiconductor device according to an eighth embodiment of the presentinvention.

In the present embodiment, the same reference numbers are assigned tothe same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 75 shown in FIG. 17 is an n-channel MOStransistor. In the n-channel MOS transistor 75, side surfaces 19 d ofthe SiC mixed crystal layers 71A and 71B are the same as those in FIG. 6in the second embodiment.

In the n-channel MOS transistor 75, except that the stress is oppositeto the stress in the second embodiment, the same effects can be obtainedand this further improves the current driving capability of then-channel MOS transistor 75.

Ninth Embodiment

FIG. 18 is a cross-sectional view illustrating an example of asemiconductor device according to a ninth embodiment of the presentinvention.

In the present embodiment, the same reference numbers are assigned tothe same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 80 shown in FIG. 18 is an n-channel MOStransistor. In the n-channel MOS transistor 80, side surfaces 19 d, 19 fof the SiC mixed crystal layers 71A and 71B are the same as those inFIG. 8 in the third embodiment.

In the n-channel MOS transistor 80, except that the stress is oppositeto the stress in the third embodiment, the same effects can be obtainedand this further improves the current driving capability of then-channel MOS transistor 80.

10th Embodiment

FIG. 19 is a cross-sectional view illustrating an example of asemiconductor device according to a 10th embodiment of the presentinvention.

In the present embodiment, the same reference numbers are assigned tothe same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 85 shown in FIG. 19 is an n-channel MOStransistor, which is obtained by incorporating the element separationregion 52 shown in FIG. 10 in the n-channel MOS transistor of theseventh embodiment.

In the element separation region 52 of the n-channel MOS transistor 85,because the HF resistance films 52C and 55 covers the whole CVD oxidefilm 52B, which is used to remove a native oxide film, erosion of theelement separation region 52 is preventable, which is caused by a HFtreatment executed for removing portions of the first side wallinsulating films 16A, 16B or for removing the native oxide film on thesilicon substrate 11. As a result, it is possible to prevent thesilicide layer of the source or the drain from reaching the n-well 11 nin the silicon substrate 11, and prevent junction leakage.

11th Embodiment

FIG. 20 is a cross-sectional view illustrating an example of asemiconductor device according to an 11th embodiment of the presentinvention.

In the present embodiment, the same reference numbers are assigned tothe same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 90 shown in FIG. 20 is an n-channel MOStransistor, which is obtained by incorporating the element separationregion 52 shown in FIG. 10 into the n-channel MOS transistor of theeighth embodiment.

The n-channel MOS transistor 90 has the same effects as the n-channelMOS transistor 85.

12th Embodiment

FIG. 21 is a cross-sectional view illustrating an example of asemiconductor device according to a 12th embodiment of the presentinvention.

The semiconductor device 95 shown in FIG. 21 is an n-channel MOStransistor, which is obtained by incorporating the element separationregion 52 shown in FIG. 10 into the n-channel MOS transistor of theninth embodiment.

The n-channel MOS transistor 95 has the same effects as the n-channelMOS transistors 85 and 90.

13th Embodiment

FIG. 22 is a cross-sectional view illustrating an example of asemiconductor device according to a 13th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device shown in FIG. 22 is a CMOS (Complementary MOS)transistor. It should be noted that the semiconductor device of thepresent embodiment may also be implemented as a p-channel MOS transistorconstituting the CMOS transistor in FIG. 22.

In FIG. 22, the semiconductor device 100 includes a p-channel MOStransistor 100 p and an n-channel MOS transistor 100 n. The p-channelMOS transistor 100 p is basically the same as the p-channel MOStransistor 10 of the first embodiment except that a source extensionregion 102EA, the drain extension region 102EB, and pocket implantedregions of the p-channel MOS transistor 100 p are different from thosein the first embodiment.

The n-channel MOS transistor 100 n is formed in a device region 11A ofan n-MOs region 101 n, which is demarcated by an element separationregion 12, in a single crystal silicon substrate 11 having a (100)crystal plane as a principal plane. In the single crystal siliconsubstrate 11, a p-type Si well 11 p is formed corresponding to thedevice region 11A.

On the silicon substrate 11 including the device region 11A, a gateinsulating film 13 is formed corresponding to a channel region in thesilicon substrate 11. On the gate insulating film 13, a gate electrode14 is formed from a poly-silicon film implanted with n-type impuritiessuch as As.

On side-walls of the laminated structure of the gate insulating film 13and the gate electrode 14, first side wall insulating films 16A and 16Bare formed. In addition, the first side wall insulating films 16A and16B cover portions of the silicon substrate besides the gate insulatingfilm 13, and cover the side-walls of the laminated structure of the gateinsulating film 13 and the gate electrode 14. Second side-wallinsulating films 18A and 18B are formed on side surfaces of the firstside walls 16A and 16B.

In the n-channel MOS transistor 100 n, p-type pocket implanted regions11 pd are formed in the device region 11A on two sides of the gateelectrode 14 in the silicon substrate 11. For example, the p-type pocketimplanted regions 11 pd are formed by implanting B or other p-typeimpurities obliquely. Further, an n-type source extension region 103EAand an n-type drain extension region 103EB are formed to partiallyoverlap the p-type pocket implanted regions 11 pd. The n-type sourceextension region 103EA and the n-type drain extension region 103EB arein contact with n-type diffusion regions 11Sn and 11Dp, respectively,which form a source region 11S and a drain region 110 of the n-channelMOS transistor 100 n, respectively.

In the p-channel MOS transistor 100 p, the source extension region 102EAand the drain extension region 102EB are formed by implanting boron (B)or other p-type impurities the same as the p-type impurity implanted inthe extended portions 19Aa, 19Ba of the SiGe mixed crystal layers 19Aand 19B. The p-type impurities in the source extension region 102EA andthe drain extension region 102EB are diffused to the silicon substrate11 by means of solid phase diffusion.

In the p-channel MOS transistor 100 p, n-type pocket implanted regionsare not formed below the gate electrode 14 on the inner side of thesource extension region 102EA and the drain extension region 102EB. Thereasons are described below.

The source extension region 102EA and the drain extension region 102EBare formed by diffusing p-type impurities the same as those in theextended portions 19Aa, 19Ba of the SiGe mixed crystal layers 19A and19B to the silicon substrate 11 by means of solid phase diffusion. Forthis reason, the impurity concentration profile from the surface of thesilicon substrate 11 along the depth direction of the silicon substrate11 is a maximum at the surface of the silicon substrate 11, anddecreases along the depth direction of the silicon substrate 11.

On the other hand, when implanting the impurities by ion-implantation,the channeling effect occurs, and a region having a high impurityconcentration, where the impurity concentration is higher than that ofthe surrounding region, is formed at a position deeper than the desiredposition. This region is referred to as “channeling high impurityconcentration region”). Due to this, in order to prevent theshort-channel effect, it is necessary to form n-type pocket implantedregions on the inner side of the source extension region 102EA and thedrain extension region 102EB at a position deeper than the sourceextension region 102EA and the drain extension region 102EB.

However, in the p-channel MOS transistor 100 p of the presentembodiment, since the source extension region 102EA and the drainextension region 102EB are formed by means of solid phase diffusion, theabove-mentioned channeling high impurity concentration region is notformed, it is possible to omit the n-type pocket implanted regions.

It is not required that the n-type pocket implanted regions be omitted,that is, the n-type pocket implanted regions can still be formed, butthe impurity concentration thereof may be lower than usual impurityconcentration.

Here, the channeling effect is a phenomenon in which impurity atomsimplanted by ion-implantation do not repeatedly collide with siliconatoms, and penetrate through the silicon crystal lattice, thus forming aregion having a high impurity concentration at a position deeper thanthe desired position.

It should be noted that when the n-type pocket implanted regions are notformed in the p-channel MOS transistor 100 p, the n-type impurityconcentration in the depth direction from the bottom of the sourceextension region 102EA and the drain extension region 102EB equal to theimpurity concentration in the n-well.

In addition, in the p-channel MOS transistor 100 p, it is preferablethat volumes of the extended portions 19Aa, 19Ba be sufficiently large,because large volumes of the extended portions 19Aa, 19Ba can increasethe stress applied on the channel region, and thus further improves thecarrier mobility. For example, it is preferable that the distance L1from the outer side ends of the second side-wall insulating films 18Aand 18B to the ends of the extended portions 19Aa, 19Ba on the side ofthe gate electrode 14 be sufficiently long. When the distance L1 issufficiently long, the parastic resistance of the channel regiondecreases, and it is anticipated that this further improves mobility ofthe p-type carriers in the channel region. However, it is certain thedistance L1 should be not so long such that the ends of the extendedportions 19Aa, 19Ba on the side of the gate electrode 14 do not touchthe side wall of the gate insulating film 13.

In addition, it is preferable that thickness t1 of the extended portions19Aa, 19Ba be in a range from 5 nm to 20 nm, because the extendedportions 19Aa, 19Ba of such a thickness reduce the parastic resistanceof the channel region, and improve mobility of the p-type carriers.

It should be noted the above-described thickness range of the extendedportions 19Aa, 19Ba is also applicable to the first embodiment throughthe 12th embodiment.

In the p-channel MOS transistor 100 p of the present embodiment, p-typeimpurities the same as those in the extended portions 19Aa, 19Ba of theSiGe mixed crystal layers 19A and 19B diffuse to the silicon substrate11 by means of solid phase diffusion. Due to the solid phase diffusion,the channeling effect does not occur, and thus, the n-type pocketimplanted regions can be omitted, or the impurity concentration of then-type pocket implanted regions can be lowered. As a result, it ispossible to improve mobility of the p-type carriers in the channelregion.

Below, a method of fabricating the semiconductor device 100 in FIG. 22is explained with reference to FIG. 23A through FIG. 23G.

FIG. 23A through FIG. 23G are cross-sectional views illustratingportions of the semiconductor device 100 in FIG. 22 for illustrating amethod of fabricating the semiconductor device 100 according to thepresent embodiment of the present invention.

Similar to FIG. 22, FIG. 23A through FIG. 23G are cross-sectional viewsalong the gate length direction of the p-channel MOS transistor 100 pand the n-channel MOS transistor 100 n of the semiconductor device 100.

In the step shown in FIG. 23A, on the p-type silicon substrate 11, thedevice region 11A is demarcated by the STI-type element separationregion 12, and n-type impurities are implanted into the device region11A of the p-MOS region 101 p, thereby, the n-type Si well 11 n isformed corresponding to the device region 11A. Similarly, p-typeimpurities are implanted into the device region 11A of the n-MOS region101 n, thereby, the p-type Si well lip is formed corresponding to thedevice region 11A.

Next, still in the step shown in FIG. 23A, on the silicon substrate 11,corresponding to the device regions 11A of both the p-MOS region 101 pand the n-MOS region 101 n, the gate insulating films 13 and the gateelectrodes 14 are formed respectively by patterning a SiON film and apoly-silicon film, which are uniformly formed on the silicon substrate11.

Next, still in the step shown in FIG. 23A, the p-MOS region 101 p iscovered with a resist film 105, and the n-MOS region 101 n is coveredwith the gate electrode 14 as a mask, B or other p-type impurities areimplanted obliquely, thereby, forming the p-type pocket implantationregions 11 pd.

In addition, with the device regions 11A of the n-MOS region 101 n beingcovered by using the gate electrode 14 as a mask, P, As or other n-typeimpurities are implanted, thereby, forming the n-type source extensionregion 103EA and the n-type drain extension region 103EB.

Next, in the step shown in FIG. 23B, the resist film 105 is removed, anda first insulating film 16 a is formed on the gate electrode 14, andthen a second insulating film 18 a is formed thereon.

Then, the second insulating film 18 a is etched back to remove portionsof the second insulating film 18 a except for the portions on the twosides of the gate electrode 14 to form the second side wall insulatingfilms 18A and 18B.

Next, the first insulating film 16 a is etched with the second side wallinsulating films 18A and 18B as masks to expose the surfaces of thesilicon substrate 11 and the gate electrode 14 to form the first sidewall insulating films 16A, 16B.

The first side wall insulating films 16A, 16B are formed from insulatingmaterials, which have etching selectivity, different from the secondside wall insulating films 18A and 18B, respectively. For example, thefirst side wall insulating films 16A, 16B are formed from silicon oxidefilms, and the second side wall insulating films 18A and 18B are formedfrom silicon nitride films. It is preferable that thickness of the firstside wall insulating films 16A, 16B on the surface of the siliconsubstrate be in a range from 5 nm to 20 nm, because in the subsequentsteps of forming the p-MOS region 10 p, portions of the first side wallinsulating films 16A, 16B are to be removed to form spaces, and then theSiGe mixed crystal layers fill up the spaces. If the thickness of thefirst side wall insulating films 16A, 16B is less than 5 nm, whenforming the spaces, it is difficult for etchants like a water solutionof HF or HF vapor to enter into the spaces, and this may make itdifficult to form the spaces. On the other hand, if the thickness of thefirst side wall insulating films 16A, 16B is greater than 20 nm, thesecond side wall insulating films 18A, 18B is apt to be too thin, andwhen forming the extended portions 19Aa and 19Ba, the second side wallinsulating films 18A, 18B is liable to lifted off.

Next, in the step shown in FIG. 23C, with the n-MOS region 101 n beingcovered by a resist film 106, B or other p-type impurities are implantedinto the p-MOS region 101 p, thereby, forming the p-type impurityregions 11Sp and 11Dp outside the second side-wall insulating films 18Aand 18B in the device region 11A in the silicon substrate 11. In orderthat the p-type impurity regions 11Sp and 11Dp are formed on the innerside of the outer ends of the second side-wall insulating films 18A and18B, the p-type impurities may be implanted obliquely into the siliconsubstrate 11 by ion-implantation.

Next, in the step shown in FIG. 23D, the resist film 106 is removed, anda silicon oxide film 108 is formed to cover the n-MOS region 101 n. Thesilicon oxide film 108 is formed to have a thickness such that thesilicon oxide film 108 is not removed in the subsequent step ofisotropically etching the p-MOS region 101 p. For example, the siliconoxide film 108 is formed to have a thickness of 40 nm by using a highdensity plasma CVD device.

Next, still in the step shown in FIG. 23D, in the silicon substrate 11corresponding to the p-MOS region 101 p, a portion of the device region11A outside the second side-wall insulating films 18A and 18B is etchedto form the trenches 111A and 111B. The method of forming the trenches111A and 111B is the same as that described with reference to FIG. 4C.

Next, still in the step shown in FIG. 23D,. portions of the first sidewall insulating films 16A, 16B in the p-MOS region 101 p are removed byisotropic etching, and below the bottom surface of the second side wallinsulating films 18A and 18B, the surface of the silicon substrate 11 isexposed, forming the spaces 16A1 and 16B1, which are like slits alongthe gate width direction. The method of forming the spaces 16A1 and 16B1is the same as that described with reference to FIG. 5A. In the spaces16A1 and 16B1, it is preferable that the distance L2 from the outer sideends of the second side-wall insulating films 18A and 18B to the ends ofthe first side wall insulating films 16A, 16B of the gate electrode 14be sufficiently long.

Next, in the step shown in FIG. 23E, the p-type SiGe mixed crystallayers 19A and 19B are epitaxially grown in the trenches 111A and 111Bin the p-MOS region 101 p as shown in FIG. 23D. The p-type SiGe mixedcrystal layers 19A and 19B fill up the spaces 16A1 and 16B1, forming theextended portions 19Aa, 19Ba. Further, the SiGe mixed crystal layers 19Aand 19B grow upward while being in close contact with the side surfacesof the second side-wall insulating films 18A, 18B. At the same time, theSiGe mixed crystal layer 19C is also formed on the surface of the gateelectrode 14. The method of forming the p-type SiGe mixed crystal layers19A and 19B is the same as that described with reference to FIG. 5B.

Next, in the step shown in FIG. 23F, a resist film 109 is formed tocover the p-MOS region 101 p, and the silicon oxide film 108 coveringthe n-MOS region 101 n is removed by dry etching to expose the surfaceof the silicon substrate 11.

Next, still in the step shown in FIG. 23F, P or other n-type impuritiesare implanted into the n-MOS region 101 n, thereby, forming the n-typeimpurity regions 11Sn and 11Dn outside the second side-wall insulatingfilms 18A and 18B in the device region 11A in the silicon substrate 11.In this way, since the n-type impurity regions 11Sn and 11Dn in then-MOS region 101 n are formed after the extended portions 19Aa, 19Ba inthe p-MOS region 101 p are formed, it is possible to prevent abnormaldiffusion of impurities in the n-type impurity regions 11Sn and 11Dn,and this improves performance of the transistor.

Next, in the step shown in FIG. 23G, the source extension region 102EAand the drain extension region 102EB are formed by heat treatment in thep-MOS region 101 p. Specifically, a RTP (Rapid Thermal Process) deviceis used to perform a heat treatment to induce diffusion of the p-typeimpurity in the extended portions 19Aa, 19Ba of the SiGe mixed crystallayers 19A and 19B in the p-channel MOS transistor 100 p to the siliconsubstrate 11 in contact with the extended portions 19Aa, 19Ba. That is,as shown by arrows in the extended portions 19Aa, 19Ba in FIG. 23G, thep-type impurities diffuse from the extended portions 19Aa, 19Ba, inwhich the impurity concentration is high, to the silicon substrate 11,in which the impurity concentration is low. Because this diffusion issolid phase diffusion, the impurity concentration profile is formed sothat the impurity concentration is high near the surface of the siliconsubstrate 11, and decreases along the depth direction of the siliconsubstrate 11. Due to this, the channeling effect, which occurs when theimpurities are implanted by ion-implantation, does not occur, thus, itis possible to prevent the short-channel effect even without forming then-type pocket implanted region. As a result, it is possible to improvemobility of the p-type carriers in the channel region.

Instead of omitting the n-type pocket implanted regions, the n-typepocket implanted regions can be formed with low impurity concentrationcompared to the usual impurity concentration.

When fabricating the n-type pocket implanted regions, as shown in thestep shown in FIG. 23A, P or other n-type impurities may be implantedobliquely into the device region 11A in the p-MOS region 101 p with thegate electrode 14 as a mask to form the pocket implanted regions.

Next, still in the step shown in FIG. 23G, heat treatment is performedto activate impurities in the p-type diffusion regions 11Sp and 11Dp orthe n-type diffusion regions 11Sn and 11Dn. This step can be omitted ifthe impurities have been activated in the heat treatment for forming thesource extension region 102EA and the drain extension region 102EB.

In addition, formation of the n-type impurity regions 11Sn and 11Dn asshown in FIG. 23F may be carried out after formation of the sourceextension region 102EA and the drain extension region 102EB as shown inFIG. 23G and before the heat treatment for impurity activation. Due tothis, it is possible to reduce influence of the heat treatment forforming the source extension region 102EA and the drain extension region102EB on the n-type impurity regions 11Sn and 11Dn, such as distortionof the profile caused by thermal diffusion.

After the step shown in FIG. 23G, a step of forming silicide films isperformed. Due to this, as shown in FIG. 22, silicide layers 20A, 20B,and 20C are formed by silicifying the surfaces of the SiGe mixed crystallayers 19A and 19B in the p-MOS region 101 p, and the surface of theSiGe mixed crystal layer 19C on the gate electrode 14. Further, silicidelayers 104A, 104B, and 104C are formed by silicifying the surface of theportion of the silicon substrate 11 corresponding to the source region11S and the drain region 11D in the n-MOS region 101 n, and the surfaceof the gate electrode 14. The method of forming the silicide layers isthe same as the step after the step in FIG. 5B.

In this way, the semiconductor device 100 includes the p-channel MOStransistor 100 p and the n-channel MOS transistor 100 n as shown in FIG.22 is formed.

In the method of fabricating the semiconductor device 100 of the presentembodiment, the p-type impurities in the extended portions 19Aa, 19Ba ofthe SiGe mixed crystal layers 19A and 19B in the p-channel MOStransistor 100 p are diffused into the silicon substrate 11 by solidphase diffusion to form the source extension region 102EA and the drainextension region 102EB. Because of the solid phase diffusion, theimpurity concentration profile is formed so that the impurityconcentration of the p-type impurities is high near the surface of thesilicon substrate 11, and decreases along the depth direction of thesilicon substrate 11. Since the channeling effect, which occurs when theimpurities are implanted by ion-implantation, does not occur, it ispossible to form the n-type pocket implanted regions with low impurityconcentration, or it is possible to prevent the short-channel effecteven without forming the n-type pocket implanted region. As a result, itis possible to improve mobility of the p-type carriers in the channelregion. In addition, since the n-type pocket implanted regions can beomitted, the fabrication process is simple.

14th Embodiment

FIG. 24 is a cross-sectional view illustrating an example of asemiconductor device 110 according to a 14th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 110 shown in FIG. 24 is a p-channel MOStransistor, which is a modification of the p-channel MOS transistor 100p in FIG. 22 in the 13th embodiment. It should be noted that thesemiconductor device of the present embodiment may be combined with then-channel MOS transistor 100 n in FIG. 22 in the 13th embodiment to formthe CMOS transistor in FIG. 22.

The p-channel MOS transistor 110 in FIG. 24 is basically the same as thep-channel MOS transistor 100 p in FIG. 22 except that the SiGe mixedcrystal layers 19A and 19B are different.

The SiGe mixed crystal layers 19A and 19B in the p-channel MOStransistor 110 are the same as those shown in FIG. 6 in the secondembodiment, and the method of fabricating the SiGe mixed crystal layers19A and 19B in the p-channel MOS transistor 110 is also the same as thatshown in FIG. 7A and FIG. 7B in the second embodiment.

In the p-channel MOS transistor 110 of the present embodiment, thesource extension region 102EA and the drain extension region 102EB areformed by diffusing, by heat treatment, the p-type impurities in theextended portions 19Aa, 19Ba of the SiGe mixed crystal layers 19A and19B into the silicon substrate 11 by means of solid phase diffusion.

Therefore, in the p-channel MOS transistor 110, because of the SiGemixed crystal layers 19A and 19B and the source extension region 102EAand the drain extension region 102EB, it is possible to further improvemobility of the p-type carriers in the channel region.

15th Embodiment

FIG. 25 is a cross-sectional view illustrating an example of asemiconductor device 110 according to a 15th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 111 shown in FIG. 25 is a p-channel MOStransistor, which is a modification of the p-channel MOS transistor 100p in FIG. 22 in the 13th embodiment. It should be noted that thesemiconductor device of the present embodiment may be combined with then-channel MOS transistor 100 n in FIG. 22 to form the CMOS transistor inFIG. 22.

The p-channel MOS transistor 111 in FIG. 25 is basically the same as thep-channel MOS transistor 100 p in FIG. 22 except that the SiGe mixedcrystal layers 19A and 19B are different.

The SiGe mixed crystal layers 19A and 19B in the p-channel MOStransistor 111 are the same as those shown in FIG. 8 in the thirdembodiment, and the method of fabricating the SiGe mixed crystal layers19A and 19B in the p-channel MOS transistor 111 is also the same as thatshown in FIG. 9A through FIG. 9C in the third embodiment.

In the p-channel MOS transistor 111 of the present embodiment, thesource extension region 102EA and the drain extension region 102EB areformed by diffusing, by heat treatment, the p-type impurities in theextended portions 19Aa, 19Ba of the SiGe mixed crystal layers 19A and19B into the silicon substrate 11 by means of solid phase diffusion.

Therefore, in the p-channel MOS transistor 111, because of the SiGemixed crystal layers 19A and 19B and the source extension region 102EAand the drain extension region 102EB, it is possible to further improvemobility of the p-type carriers in the channel region.

16th Embodiment

FIG. 26 is a cross-sectional view illustrating an example of asemiconductor device 110 according to a 16th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 115 shown in FIG. 26 is a p-channel MOStransistor, which is a modification of the p-channel MOS transistor 100p in FIG. 22. It should be noted that the semiconductor device of thepresent embodiment may be combined with the n-channel MOS transistor 100n in FIG. 22 to form the CMOS transistor in FIG. 22.

The p-channel MOS transistor 115 in FIG. 26 is basically the same as thep-channel MOS transistor 100 p in FIG. 22 in the 13th embodiment exceptthat the element separation region 52 has a different structure. Theelement separation region 52 in the p-channel MOS transistor 115 is thesame as that shown in FIG. 10 in the fourth embodiment.

Therefore, in the p-channel MOS transistor 115, it is possible toprevent erosion of the element separation region 52 caused by the HFtreatment and prevent junction leakage, and further improve mobility ofthe p-type carriers in the channel region.

17th Embodiment

FIG. 27 is a cross-sectional view illustrating an example of asemiconductor device 116 according to a 17th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 116 shown in FIG. 27 is a p-channel MOStransistor, which is a modification of the p-channel MOS transistor 100p in FIG. 22. It should be noted that the semiconductor device of thepresent embodiment may be combined with the n-channel MOS transistor 100n in FIG. 22 to form the CMOS transistor in FIG. 22.

The p-channel MOS transistor 116 in FIG. 27 is basically the same as thep-channel MOS transistor 110 in FIG. 24 in the 14th embodiment exceptthat the element separation region 52 has a different structure. Theelement separation region 52 in the p-channel MOS transistor 116 is thesame as that shown in FIG. 14 in the fifth embodiment.

Therefore, in the p-channel MOS transistor 116, it is possible toprevent erosion of the element separation region 52 caused by the HFtreatment and prevent junction leakage, and further improve mobility ofthe p-type carriers in the channel region.

18th Embodiment

FIG. 28 is a cross-sectional view illustrating an example of asemiconductor device 117 according to an 18th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 117 shown in FIG. 28 is a p-channel MOStransistor, which is a modification of the p-channel MOS transistor 100p in FIG. 22. It should be noted that the semiconductor device of thepresent embodiment may be combined with the n-channel MOS transistor 100n in FIG. 22 to form the CMOS transistor in FIG. 22.

The p-channel MOS transistor 117 in FIG. 28 is basically the same as thep-channel MOS transistor 111 in FIG. 25 in the 15th embodiment exceptthat the element separation region 52 has a different structure. Theelement separation region 52 in the p-channel MOS transistor 117 is thesame as that shown in FIG. 15 in the sixth embodiment.

Therefore, in the p-channel MOS transistor 116, it is possible toprevent erosion of the element separation region 52 caused by the HFtreatment and prevent junction leakage, and further improve mobility ofthe p-type carriers in the channel region.

19th Embodiment

FIG. 29 is a cross-sectional view illustrating an example of asemiconductor device 120 according to a 19th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

In FIG. 29, in each of the p-channel MOS transistor 120 p and then-channel MOS transistor 120 n of the semiconductor device 120, thirdside wall insulating films 122A and 122B are formed between one of theopposite side walls of the gate electrode 14 and one of the first sidewall insulating films 16A and 16B to cover the side walls of the gateinsulating film 13.

Except for presence of the third side wall insulating films 122A and122B, the p-channel MOS transistor 120 p of the semiconductor device 120in FIG. 29 in the present embodiment is the same as the p-channel MOStransistor 10 of the first embodiment in FIG. 3.

The third side wall insulating films 122A and 122B are formed frominsulating, which have etching selectivity, different from the firstside wall insulating films 16A and 16B. For example, if the first sidewall insulating films 16A and 16B are formed from a silicon oxide film,the third side wall insulating films 122A and 122B are formed from asilicon nitride film.

The extended portions 19Aa, 19Ba of the p-channel MOS transistor 120 pare in contact with the first side wall insulating films 16A and 16B onthe side of the gate electrode 14. When the extended portions 19Aa, 19Baare very close to the side walls of the gate insulating film 13, thestress from the SiGe mixed crystal of the extended portions 19Aa, 19Bais more effectively applied on the channel region, and it is anticipatedthat the parastic resistance of the channel region decreases, and themobility of the p-type carriers is improved. For this reason, it ispreferable that the extended portions 19Aa, 19Ba be formed in contactwith the outer surface of the third side wall insulating films 122A and122B on the side of the gate insulating film 13.

In addition, it is preferable that the thickness of the third side wallinsulating films 122A and 122B be equal to or less than that of thefirst side walls 16A and 16B, because in this case the extended portions19Aa, 19Ba can be formed at a position very close to the side walls ofthe gate insulating film 13. For example, if the thickness of the firstside walls 16A and 16B is 10 nm, the thickness of the third side wallinsulating films 122A and 122B may be in a range from 3 nm to 10 nm.

In FIG. 29, it is illustrated that the lower ends of the first sidewalls 16A and 16B are formed to be roughly at the same height as thebottom surfaces of the second side-wall insulating films 18A and 18B.However, the first side walls 16A and 16B may also be formed to behigher than the bottom surfaces of the second side-wall insulating films18A and 18B.

In the n-channel MOS transistor 120 n, the third side wall insulatingfilms 122A and 122B are not indispensable. However, it is preferable toform the third side wall insulating films 122A and 122B also in then-channel MOS transistor 120 n, because the gate lengths of thep-channel MOS transistor 120 p and the n-channel MOS transistor 120 ncan be aligned if they are formed in the same step.

In the present embodiment, because the third side wall insulating films122A and 122B are formed in the p-channel MOS transistor 120 p of thesemiconductor device 120, the extended portions 19Aa, 19Ba can be formedat a position in contact with the outer surface of the third side wallinsulating films 122A and 122B. Due to this, stress from the SiGe mixedcrystal constituting the extended portions 19Aa, 19Ba can be moreeffectively applied on the channel region, and as a result, it ispossible to further improve the mobility of the p-type carriers.

Below, a method of fabricating the semiconductor device 120 in FIG. 29is explained with reference to FIG. 30A and FIG. 30B.

FIG. 30A and FIG. 30B are cross-sectional views illustrating portions ofthe semiconductor device 120 in FIG. 29 for illustrating a method offabricating the semiconductor device 120 according to the 19thembodiment of the present invention.

In the step shown in FIG. 30A, on the p-type silicon substrate 11, theelement separation region 12, and the p-type Si well 11 p and the n-typeSi well 11 n in the device region 11A are formed.

In addition, the gate insulating films 13 and the gate electrodes 14 areformed respectively on the silicon substrate 11 and corresponding to therespective device regions 11A of a p-MOS region 121 p and an n-MOSregion 121 n. The above steps are the same as those shown in FIG. 23A.

Next, still in the step shown in FIG. 30A, a third insulating film 122 ais formed to cover the. gate insulating films 13 and the gate electrodes14. The third insulating film 122 a is formed from an insulatingmaterial, which has etching selectivity, different from the first sidewall insulating films 16A and 16B, which are formed in the subsequentsteps. For example, the third insulating film 122 a is a silicon nitridefilm formed by CVD. In addition, the third insulating film 122 a isetched back, thereby, forming the third side wall insulating films 122Aand 122B on the side walls of the gate insulating films 13 and the gateelectrodes 14. The lower ends of the third side wall insulating films122A and 122B are in contact with the silicon substrate 11.

Next, still in the step shown in FIG. 30A, the p-type pocket implantedregions 11pd, and the n-type source extension region 103EA and then-type drain extension region 103EB are formed in the device region 11Ain the n-MOS region 121 n. This step is the same as that shown in FIG.23A.

Next, still in the step shown in FIG. 30A, with the gate electrode 14 asa mask, As or other n-type impurities are implanted obliquely in thedevice region 11A of the p-MOS region 121 p, thereby, forming the n-typepocket implantation regions 11 pc. Further, with the gate electrode 14as a mask, boron (B) or other p-type impurities are implanted in thedevice region 11A of the p-MOS region 121 p, thereby forming the sourceextension region 11EA and the drain extension region 11EB.

Next, in the step shown in FIG. 30B, the first side wall insulatingfilms 16A and 16B and the second side-wall insulating films 18A and 18Bare formed on the outer surfaces of the third side wall insulating film122A and 122B. The method of forming the first side wall insulatingfilms 16A and 16B and the second side-wall insulating films 18A and 18Bis the same as that shown in FIG. 23B.

Next, still in the step shown in FIG. 30B, steps the same as those inFIG. 23C and FIG. 23D are performed to form the silicon oxide film 108covering the p-MOS region 121 n, the p-type impurity regions 11Sp and11Dp in the p-MOS region 121 p, and the trenches 111A and 111B.

Next, still in the step shown in FIG. 30B, portions of the first sidewall insulating films 16A, 16B in the p-MOS region 121 p are removed byisotropic etching, and below the bottom surfaces of the second side wallinsulating films 18A and 18B, the surface of the silicon substrate 11 isexposed, forming the spaces 16A1 and 16B1.

When the first side wall insulating films 16A, 16B are formed fromsilicon oxide films, a water solution of HF or HF vapor is used in theisotropic etching. In the present embodiment, since the third side wallinsulating films 122A and 122B are formed from a silicon nitride film,even when etching of the first side wall insulating films 16A, 16B isoverdone, the etching process stops on the outer surface of the thirdside wall insulating films 122A and 122B. For this reason, it ispossible to prevent the gate insulating film 13 from being eroded, andprevent the surface of silicon substrate 11 in the channel region frombeing exposed. In addition, the spaces 16A1 and 16B1 can be formed veryclose to the side walls of the gate insulating film 13.

In the isotropic etching, the amount of the first side wall insulatingfilms 16A, 16B to be removed is determined appropriately in the same wayas in the semiconductor device 10 in FIG. 3 in the first embodiment,further, it is preferable that the spaces 16A1 and 16B1 can reach theouter surface of the third side wall insulating films 122A and 122B. Dueto this, it is possible to make the extended portions 19Aa, 19Ba large.

During the isotropic etching, the first side wall insulating films 16A,16B on the gate electrode 14 are also etched, and forming openings 123A2and 123B2. In addition, since the upper portion of the third side wallinsulating films 122A and 122B may be formed to be thinner than thelower portion of the third side wall insulating films 122A and 122B,when carrying out the isotropic etching, the portions of the third sidewall insulating films 122A and 122B exposed in the openings 123A2 and123B2 may be removed.

Next, after the step shown in FIG. 30B, the step of forming the SiGemixed crystal regions as shown in FIG. 23E, the step of removing theresist film in the n-MOS region and the step of forming the n-typeimpurity regions as shown in FIG. 23F, and the step of forming silicidelayers after the step in FIG. 23G, the semiconductor device 120 as shownin FIG. 29 of the present embodiment is obtained.

In the method of fabricating the semiconductor device 120 according tothe 19th embodiment of the present invention, since the third side wallinsulating films 122A and 122B are formed on the side walls of the gateinsulating films 13 and the gate electrodes 14, even when the isotropicetching of the first side wall insulating films 16A, 16B is overdone,the etching process stops on the outer surface of the third side wallinsulating films 122A and 122B. For this reason, it is possible toprevent the gate insulating film 13 from being eroded, and preventleakage of the gate insulating film 13. In addition, since the surfaceof silicon substrate 11 in the channel region is not exposed, Inaddition, it is possible to prevent short circuit between the SiGe mixedcrystal filling up the spaces 16A1 and 16B1 (the extended portions 19Aa,19Ba) and the channel region.

In addition, since the spaces 16A1 and 16B1 can be formed in contactwith the outer surface of the third side wall insulating films 122A and122B, it is possible to obtain the extended portions 19Aa, 19Ba of alarge volume. Due to this, stress from the SiGe mixed crystalconstituting the extended portions 19Aa, 19Ba can be more effectivelyapplied on the channel region, and as a result, it is possible tofurther improve the mobility of the p-type carriers.

20th Embodiment

FIG. 31 is a cross-sectional view illustrating an example of asemiconductor device 125 according to a 20th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 125 shown in FIG. 31 in the present embodimentis basically the same as the p-channel MOS transistor 120 p of thesemiconductor device 120 shown in FIG. 29 in the 19th embodiment exceptthat the SiGe mixed crystal layers 19A and 19B have a differentstructure.

The SiGe mixed crystal layers 19A and 19B in the present embodiment arethe same as those shown in FIG. 6 in the second embodiment, and themethod of fabricating the SiGe mixed crystal layers 19A and 19B in thepresent embodiment is also the same as that shown in FIG. 7A and FIG. 7Bin the second embodiment.

In the semiconductor device 125 of the present embodiment, the thirdside wall insulating films 122A and 122B are formed between one of theopposite side walls of the gate electrode 14 and one of the first sidewall insulating films 16A and 16B in contact with the surface of thesilicon substrate 11 to cover the side walls of the gate insulating film13.

Therefore, the semiconductor device 125 of the present embodiment hasthe same effect as the semiconductor device 120 in FIG. 29 in the 19thembodiment. Additionally, because of the structural effect of the SiGemixed crystal layers 19A and 19B, it is possible to further improve themobility of the p-type carriers.

21st Embodiment

FIG. 32 is a cross-sectional view illustrating an example of asemiconductor device 126 according to a 21st embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 126 shown in FIG. 32 in the present embodimentis basically the same as the p-channel MOS transistor 120 p of thesemiconductor device 120 shown in FIG. 29 in the 19th embodiment exceptthat the SiGe mixed crystal layers 19A and 19B have a differentstructure.

The SiGe mixed crystal layers 19A and 19B in the present embodiment arethe same as those shown in FIG. 8 in the third embodiment, and themethod of fabricating the SiGe mixed crystal layers 19A and 19B in thepresent embodiment is also the same as that shown in FIG. 9A throughFIG. 9C in the third embodiment.

In the semiconductor device 126 of the present embodiment, the thirdside wall insulating films 122A and 122B are formed between one of theopposite side walls of the gate electrode 14 and one of the first sidewall insulating films 16A and 16B in contact with the surface of thesilicon substrate 11 to cover the side walls of the gate insulating film13.

Therefore, the semiconductor device 126 of the present embodiment hasthe same effect as the semiconductor device 120 in FIG. 29 in the 19thembodiment. Additionally, because of the effect of the SiGe mixedcrystal layers 19A and 19B, it is possible to further improve themobility of the p-type carriers.

22nd Embodiment

FIG. 33 is a cross-sectional view illustrating an example of asemiconductor device 127 according to a 22nd embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 127 shown in FIG. 33 is basically the same asthe p-channel MOS transistor 120 p in FIG. 29 in the 19th embodimentexcept that the element separation region 52 has a different structure.The element separation region 52 in the semiconductor device 127 is thesame as that shown in FIG. 10 in the fourth embodiment.

Therefore, the semiconductor device 127 of the present embodiment hasthe same effect as the semiconductor device 127 in FIG. 29 in the 19thembodiment, and it is possible to prevent erosion of the elementseparation region 52 caused by the HF treatment and prevent junctionleakage.

23rd Embodiment

FIG. 34 is a cross-sectional view illustrating an example of asemiconductor device 128 according to a 23rd embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 128 shown in FIG. 34 is basically the same asthe semiconductor device 125 in FIG. 31 in the 20th embodiment exceptthat the element separation region 52 has a different structure. Theelement separation region 52 in the semiconductor device 128 is the sameas that shown in FIG. 14 in the fifth embodiment.

Therefore, the semiconductor device 128 of the present embodiment hasthe same effect as the semiconductor device 125 in FIG. 31 in the 20thembodiment, and it is possible to prevent erosion of the elementseparation region 52 caused by the HF treatment and prevent junctionleakage.

24th Embodiment

FIG. 35 is a cross-sectional view illustrating an example of asemiconductor device 129 according to a 24th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 129 shown in FIG. 35 is basically the same asthe semiconductor device 126 in FIG. 32 in the 21st embodiment exceptthat the element separation region 52 has a different structure. Theelement separation region 52 in the semiconductor device 129 is the sameas that shown in FIG. 15 in the sixth embodiment.

Therefore, the semiconductor device 129 of the present embodiment hasthe same effect as the semiconductor device 126 in FIG. 32 in the 21stembodiment, and it is possible to prevent erosion of the elementseparation region 52 caused by the HF treatment and prevent junctionleakage.

25th Embodiment

FIG. 36 is a cross-sectional view illustrating an example of asemiconductor device 130 according to a 25th embodiment of the presentinvention.

FIG. 37 is an enlarged cross-sectional view of a principal portion ofthe semiconductor device 130.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 130 includes a p-channel MOS transistor 130 pand an n-channel MOS transistor 130 n. In the p-channel MOS transistor130 p, the source extension region 102EA and the drain extension region102EB are formed by diffusing p-type impurities the same as the p-typeimpurities implanted in the extended portions 19Aa, 19Ba of the SiGemixed crystal layers 19A and 19B to the silicon substrate 11 by solidphase diffusion. In addition, in the p-channel MOS transistor 130 p ofthe semiconductor device 130, the third side wall insulating films 122Aand 122B are formed between one of the opposite side walls of the gateelectrode 14 and one of the first side wall insulating films 16A and 16Bin contact with the side surface of the silicon substrate 11 to coverthe side walls of the gate insulating film 13.

In other words, the p-channel MOS transistor 130 p in the presentembodiment corresponds to a combination of the p-channel MOS transistor100 p in FIG. 22 in the 13th embodiment and the p-channel MOS transistor120 p in FIG. 29 in the 19th embodiment.

In addition, in the p-channel MOS transistor 130 p, since the extendedportions 19Aa, 19Ba are in contact with the outer sides of the thirdside wall insulating films 122A and 122B on the side of the gateinsulating film 13, the stress from the SiGe mixed crystal of theextended portions 19Aa, 19Ba can be effectively applied on the channelregion. Further, since the extended portions 19Aa, 19Ba are very closeto the gate insulating film 13, the p-type impurities diffused from theSiGe mixed crystal of the extended portions 19Aa, 19Ba are distributedin proximity of the two sides of the gate insulating film 13, thereby,forming the source extension region 102EA and the drain extension region102EB. For this reason, it is anticipated that the parastic resistanceof the channel region can be reduced and the mobility of the p-typecarriers can be improved.

It is described above that preferably the extended portions 19Aa, 19Baare in contact with the outer surface of the third side wall insulatingfilms 122A and 122B on the side of the gate insulating film 13, but thisis not indispensable. For example, the first side wall insulating films16A and 16B may be disposed between the extended portions 19Aa, 19Ba andthe third side wall insulating films 122A and 122B, respectively.

The semiconductor device 130 of the present embodiment can be fabricatedby combining the method of fabricating the p-channel MOS transistor 100p in FIG. 22 in the 13th embodiment and the method of fabricating thep-channel MOS transistor 120 p in FIG. 29 in the 19th embodiment.Detailed descriptions are omitted.

26th Embodiment

FIG. 38 is a cross-sectional view illustrating an example of asemiconductor device 140 according to a 26th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 140 shown in FIG. 38 is an n-channel MOStransistor, which is a modification of the semiconductor device 70 inFIG. 16 in the 7th embodiment.

In the semiconductor device 140, source extension region 143EA and drainextension region 143EB are formed by diffusing the n-type impurities inthe extended portions 71Aa, 71Ba of the SiC mixed crystal layers 71A and71B to the silicon substrate 11 by solid phase diffusion.

Therefore, since the high impurity concentration region caused by thechanneling effect is not formed, it is possible to reduce the impurityconcentration of the n-type pocket implanted regions or omit the n-typepocket implanted regions, thus, it is possible to further improvemobility of the p-type carriers in the channel region.

In addition, similar to the p-channel MOS transistor 100 p in the 13thembodiment, in the semiconductor device 140, it is preferable thatvolumes of the extended portions 71Aa, 71Ba be sufficiently large,because large volumes of the extended portions 71Aa, 71Ba can increasethe stress applied on the channel region, and thus further improves thecarrier mobility.

The method of fabricating the semiconductor device 140 in the presentembodiment is nearly the same as the method of fabricating thesemiconductor device 70 in FIG. 16 in the 16th embodiment except thatthe method of fabricating the source extension region 143EA and thedrain extension region 143EB is different.

When fabricating the source extension region 143EA and the drainextension region 143EB, after forming the n-type SiC mixed crystallayers 71A and 71B and the extended portions 71Aa, 71Ba, the n-typeimpurities in the extended portions 71Aa, 71Ba of the SiC mixed crystallayers 71A, 71B are diffused, by heat treatment, to the siliconsubstrate 11 by means of solid phase diffusion. For this reason, theimpurity concentration profile from the surface of the silicon substrate11 along the depth direction of the silicon substrate 11 is a maximum atthe surface of the silicon substrate 11, and decreases along the depthdirection of the silicon substrate 11. The conditions of the heattreatment are roughly the same as those as shown in the step of formingthe p-channel MOS transistor in FIG. 23G.

When the semiconductor device 140 of the present embodiment is combinedwith a p-channel MOS transistor to form a CMOS transistor, the stepsfrom FIG. 23A to FIG. 23G can be carried out while just replacing thesteps for forming a p-channel MOS transistor with steps for forming then-channel MOS transistor.

In addition, the SiC mixed crystal layers of the semiconductor device140 may also be replaced by the SiC mixed crystal layers of thesemiconductor device 75 in the 17th embodiment, or the semiconductordevice 80 in the 18th embodiment.

Further, the element separation region 12 of the semiconductor device140 may be replaced by the element separation region 52 of thesemiconductor device in FIG. 19 in the 10th embodiment, and afterreplacing the element separation region, the SiC mixed crystal layers ofthe semiconductor device 140 may be further replaced by the SiC mixedcrystal layers of the semiconductor device 75 in the 17th embodiment, orthe semiconductor device 80 in the 18th embodiment.

27th Embodiment

FIG. 39 is a cross-sectional view illustrating an example of asemiconductor device 145 according to a 27th embodiment of the presentinvention.

In the following descriptions, the same reference numbers are assignedto the same elements as those described in the previous embodiments, andoverlapping descriptions are omitted.

The semiconductor device 145 shown in FIG. 39 is an n-channel MOStransistor. In the semiconductor device 145, the third side wallinsulating films 122A and 122B are formed between one of the oppositeside walls of the gate electrode 14 and one of the first side wallinsulating films 16A and 16B in contact with the side surface of thesilicon substrate 11 to cover the side walls of the gate insulating film13. Except for the third side wall insulating films 122A and 122B, thesemiconductor device 145 is the same as the semiconductor device 70 inFIG. 16 in the seventh embodiment.

In the semiconductor device 145, the third side wall insulating films122A and 122B are formed from insulating materials, which have etchingselectivity, different from the first side wall insulating films 16A and16B. For example, if the first side wall insulating films 16A and 16Bare formed from a silicon oxide film, the third side wall insulatingfilms 122A and 122B are formed from a silicon nitride film.

In the semiconductor device 145, the extended portions 71Aa, 71Ba are incontact with the first side wall insulating films 16A and 16B on theside of the gate insulating film 13. When the extended portions 71Aa,71Ba are arranged to be very close to the side walls of the gateinsulating film 13, the stress from the SiC mixed crystal layers of theextended portions 71Aa, 71Ba can be effectively applied on the channelregion. As a result, the parastic resistance of the channel regiondecreases, and the carrier mobility is improved.

In addition, it is preferable that the extended portions 71Aa, 71Ba beformed in contact with the outer surface of the third side wallinsulating films 122A and 122B on the side of the gate insulating film13, because this further reduces the parastic resistance of the channelregion, and further improves the carrier mobility.

It should be noted that the SiC mixed crystal layers of thesemiconductor device 145 may be replaced by the SiC mixed crystal layersof the semiconductor device 75 in the 17th embodiment or thesemiconductor device 80 in the 18th embodiment.

Further, the element separation region 12 of the semiconductor device145 may be replaced by the element separation region 52 of thesemiconductor device in FIG. 19 in the 10th embodiment, and afterreplacing the element separation region, the SiC mixed crystal layers ofthe semiconductor device 145 may be further replaced by the SiC mixedcrystal layers of the semiconductor device 75 in the 17th embodiment orthe semiconductor device 80 in the 18th embodiment.

While the invention is described above with reference to specificembodiments chosen for purpose of illustration, it should be apparentthat the invention is not limited to these embodiments, but numerousmodifications could be made thereto by those skilled in the art withoutdeparting from the basic concept and scope of the invention.

For example, the n-channel MOS transistor in the semiconductor device inthe 19th embodiment may be replaced by one of the semiconductor devicesof the seventh embodiment through the 12th embodiment, or by thesemiconductor devices in the 26th, 27th embodiments, or by thesemiconductor devices (n-channel MOS transistor) including theabove-mentioned modifications. Further, the n-channel MOS transistorsobtained by the above replacement may be combined with p-channel MOStransistors obtained by replacing the p-channel MOS transistor of thesemiconductor device in the 13th embodiment by the semiconductor deviceof one of the first embodiment through the sixth embodiment, and the14th embodiment through the 25th embodiment.

1. A semiconductor device, comprising: a silicon substrate having achannel region; a gate electrode formed over the silicon substratecorresponding to the channel region with a gate insulating film inbetween; a first side wall insulating film formed on side walls of thegate electrode; a second side wall insulating film formed on sidesurfaces of the first side wall; a source extension region and a drainextension region formed from diffusion regions having a firstconductivity, said diffusion regions being formed in the siliconsubstrate on sides of the gate electrode to sandwich the channel region;a source region and a drain region formed from diffusion regions havingthe first conductivity, said diffusion regions being formed in thesilicon substrate outside the second side wall insulating film and incontact with the source extension region and the drain extension region,respectively; and a semiconductor mixed crystal layer formed in thesilicon substrate outside the second side wall insulating film andepitaxially grown over the silicon substrate; wherein the semiconductormixed crystal layer is formed from a SiGe mixed crystal when the firstconductivity is p-type, or from a SiC mixed crystal when the firstconductivity is n-type, the semiconductor mixed crystal layer includesan impurity having the first conductivity, the semiconductor mixedcrystal layer is grown to a height different from an interface betweenthe silicon substrate and the gate insulating film, and thesemiconductor mixed crystal layer has an extended portion between abottom surface of the second side wall insulating film and a surface ofthe silicon substrate, said extended portion being in contact with aportion of one of the source extension region and the drain extensionregion, said extended portion having a ton surface thereof in contactwith the bottom surface of the second side wall insulating film, and thesource extension region and the drain extension region include the sameimpurity as an impurity in the extended portion, and a concentration ofthe impurity in the source extension region and the drain extensionregion is a maximum at the extended portion and decreases from a surfaceof the silicon substrate along a depth direction of the siliconsubstrate.
 2. The semiconductor device as claimed in claim 1, whereinthe source extension region and the drain extension region are formed bydiffusing the impurity in the extended portion.
 3. The semiconductordevice as claimed in claim 1, wherein a region below the gate insulatingfilm on an inner side of the source extension region and the drainextension region is a well region having a second conductivity oppositeto the first conductivity, and in a region deeper than the sourceextension region and the drain extension region, a concentration of animpurity having the second conductivity approximately equals aconcentration of an impurity in the well region.
 4. The semiconductordevice as claimed in claim 1, wherein the semiconductor device is ap-channel MOS transistor in which the first conductivity is p-type, andthe semiconductor mixed crystal layer is formed from a SiGe mixedcrystal layer including a p-type impurity, and the source extensionregion and the drain extension region include the same type of impurityas the extended portion.
 5. The semiconductor device as claimed in claim1, wherein the semiconductor device is an n-channel MOS transistor inwhich the first conductivity is of n-type, and the semiconductor mixedcrystal layer is formed from a SiC mixed crystal layer including ann-type impurity, and the source extension region and the drain extensionregion include the same type of impurity as the extended portion.
 6. Thesemiconductor device as claimed in claim 1, wherein a thickness of theextended portion is in a range from 5 nm to 20 nm.
 7. The semiconductordevice as claimed in claim 1, wherein a third side wall insulating filmis formed between one of two opposite side walls of the gate electrodeand the first side wall insulating film, said third side wall insulatingfilm being in contact with the surface of the silicon substrate andcovering a side wall of the gate insulating film, the third side wallinsulating film and the first side wall insulating film are formed fromdifferent insulating materials each having etching selectivity.
 8. Thesemiconductor device as claimed in claim 1, wherein the siliconsubstrate has a (100) plane as a principal plane; and the gate electrodeextends over the silicon substrate approximately in a <110> direction orapproximately in a <100> direction.
 9. The semiconductor device asclaimed in claim 1, wherein the semiconductor mixed crystal layer isformed in contact with an outer surface of the second side wallinsulating film.
 10. The semiconductor device as claimed in claim 1,wherein side surfaces of the semiconductor mixed crystal layer includefacets at predetermined angles relative to a principal plane of thesilicon substrate.
 11. The semiconductor device as claimed in claim 1,wherein the first side wall insulating film and the second side wallinsulating film are formed from different insulating materials eachhaving etching selectivity.
 12. A semiconductor device, comprising: asilicon substrate having a channel region; a gate electrode formed overthe silicon substrate corresponding to the channel region with a gateinsulating film in between; a first side wall insulating film formed onside walls of the gate electrode; a second side wall insulating filmformed on side surfaces of the first side wall; a source extensionregion and a drain extension region formed from diffusion regions havinga first conductivity, said diffusion regions being formed in the siliconsubstrate on sides of the gate electrode to sandwich the channel region;a source region and a drain region formed from diffusion regions havingthe first conductivity, said diffusion regions being formed in thesilicon substrate outside the second side wall insulating film and incontact with the source extension region and the drain extension region,respectively; and a semiconductor mixed crystal layer formed in thesilicon substrate outside the second side wall insulating film andepitaxially grown over the silicon substrate; wherein the semiconductormixed crystal layer is formed from a SiGe mixed crystal when the firstconductivity is p-type, or from a SiC mixed crystal when the firstconductivity is n-type, the semiconductor mixed crystal layer includesan impurity having the first conductivity, the semiconductor mixedcrystal layer is grown to a height different from an interface betweenthe silicon substrate and the gate insulating film, and thesemiconductor mixed crystal layer has an extended portion between abottom surface of the second side wall insulating film and a surface ofthe silicon substrate, said extended portion being in contact with aportion of one of the source extension region and the drain extensionregion, said extended portion having a ton surface thereof in contactwith the bottom surface of the second side wall insulating film, a thirdside wall insulating film is formed between one of two opposite sidewalls of the gate electrode and the first side wall insulating film,said third side wall insulating film being in contact with the surfaceof the silicon substrate and covering a side wall of the gate insulatingfilm, and the third side wall insulating film and the first side wallinsulating film are formed from different insulating materials eachhaving etching selectivity.
 13. The semiconductor device as claimed inclaim 12, wherein a thickness of the third side wall insulating film isapproximately equal to or less than a thickness of the first side wallinsulating film.
 14. The semiconductor device as claimed in claim 12,wherein the extended portion is in contact with an outer side surface ofthe third side wall insulating film.
 15. The semiconductor device asclaimed in claim 12, wherein a thickness of the extended portion is in arange from 5 nm to 20 nm.
 16. The semiconductor device as claimed inclaim 12, wherein the silicon substrate has a (100) plane as a principalplane; and the gate electrode extends over the silicon substrateapproximately in a <110> direction or approximately in a <100>direction.
 17. The semiconductor device as claimed in claim 12, whereinthe semiconductor mixed crystal layer is formed in contact with an outersurface of the second side wall insulating film.
 18. The semiconductordevice as claimed in claim 12, wherein side surfaces of thesemiconductor mixed crystal layer include facets at predetermined anglesrelative to a principal plane of the silicon substrate.
 19. Thesemiconductor device as claimed in claim 12, wherein the first side wallinsulating film and the second side wall insulating film are formed fromdifferent insulating materials each having etching selectivity.